(中南大學(xué) 輕質(zhì)高強結(jié)構(gòu)材料重點實驗室，長沙 410083)
摘 要: 碲鋅鎘(CZT)晶體被認(rèn)為是目前最有前途的室溫半導(dǎo)體探測器材料之一，因為其原子序數(shù)大、電阻率高、禁帶寬度大，相較于傳統(tǒng)材料探測器件具有能量分辨率高、體積小、便攜等優(yōu)點。目前，氣相法、熔體法、溶液法等技術(shù)都被用來生長碲鋅鎘晶體。其中熔體法因生長系統(tǒng)簡單可靠、速度快、晶體體積大等優(yōu)點，已廣泛應(yīng)用于工業(yè)生產(chǎn)。但CZT低導(dǎo)熱率、大蒸氣壓差異、低層錯能等物理特性導(dǎo)致熔體法不可避免地會在晶體生長中引入空位、沉淀/夾雜相和位錯等缺陷，嚴(yán)重影響其探測器的能量分辨率、響應(yīng)速度等性能。本文對比了幾種主流CZT晶體生長方法的優(yōu)劣，總結(jié)了常見缺陷及改性的研究進(jìn)展，并對CZT單晶生長及缺陷調(diào)控等未來研究方向進(jìn)行了分析與展望。
關(guān)鍵字: 碲鋅鎘；熔體法；缺陷；單晶；半導(dǎo)體
（National Key Laboratory of Science and Technology on High-strength Structural Materials, Central South University, Changsha 410083, China）
Abstract:CdZnTe (CZT) detectors have been widely proposed and developed for room-temperature X-ray spectroscopy benefit from its excellent properties, and great efforts have been made on the crystal growth technologies. In last decades, melt growth method developed as most popular industrial method, since it requires simpler system, and growing faster and larger volume single crystal etc., compared to vapor transport method and solution growth method. On the other side, physical properties of CZT, such as low thermal conductivity, huge difference in vapor pressure, and low stacking fault energy etc., foster defects during the growth of crystal, like vacancies, precipitation, impurities, and dislocations. These defects restrain the performance of the detectors in terms of energy resolution and response speed. This paper compared the advantages and disadvantages between common growth methods, and summarizes the research on defects and annealing process. It might provide outlook on future in advancing the development of crystal growth and defects inhibition.
Key words: CdZnTe; melt growth; defects; single crystal; semiconductors
