(1. 中南大學(xué) 冶金與環(huán)境學(xué)院，長沙 410083；
2. 長江存儲(chǔ)科技有限責(zé)任公司，武漢 430000)
摘 要: 采用恒電位沉積法，在二元Sb-GO溶液體系中得到rGO-Sb預(yù)制層，在此過程中，GO被有效還原成rGO，并與Sb形成化學(xué)鍵。隨后通過將預(yù)制層進(jìn)行二段硒化熱處理，快速去除多余的Se制備出rGO-Sb2Se3光陰極薄膜。通過XRD、SEM、Raman、XPS、UV-vis及PEC等手段對(duì)薄膜樣品進(jìn)行表征以及光電化學(xué)性能測試。結(jié)果表明：負(fù)載rGO使得rGO-Sb2Se3在700 nm以內(nèi)的可見光區(qū)域的光吸收系數(shù)顯著提升。rGO優(yōu)良的導(dǎo)電性能及較高的載流子遷移率，可以快速轉(zhuǎn)移電荷，抑制載流子的復(fù)合，因此光電化學(xué)性能以及光穩(wěn)定性大大提高，光電流密度增大至接近Sb2Se3單相的2倍(-0.20 mA/cm2)。又因?yàn)閞GO-Sb2Se3導(dǎo)帶位置(-0.74 V vs.RHE)遠(yuǎn)負(fù)于析氫電位(0 V vs.RHE)，故可作為一種新型光還原產(chǎn)氫的陰極，具備廣闊的應(yīng)用前景。
關(guān)鍵字: 恒電位沉積；硒化銻；還原氧化石墨烯；光電化學(xué)
（1. School of Metallurgy and Environment, Central South University, Changsha 410083, China;
2. Yangtze Memory Technologies Co., Ltd., Wuhan 430000, China）
Abstract:Using the potentiostatic electrodeposition method, the rGO-Sb pre-layer was obtained in the binary Sb-GO solution system, in which GO was effectively reduced to rGO, and there were chemical bonds forming between rGO and Sb nanoparticles, then the rGO-Sb pre-layer was transformed to rGO-Sb2Se3 through a two-stage selenization treatment. The Sb2Se3 and rGO-Sb2Se3 composite film were characterized by XRD, SEM, Raman, XPS, UV-vis and carried out the photoelectrochemical test. The results indicate that the modification of rGO induces are markably increased light absorption coefficient within 700 nm in the visible light region. Due to the excellent conductivity and high carriers-mobility of rGO, it can quickly transfer charges and prevent the recombination of photo-induced carriers, so the photoelectrochemical performance and light-stability are significantly improved, and photocurrent density increases to nearly twice (-0.20 mA/cm2) as much as that of Sb2Se3 film. Because the conduction band position (-0.74 V vs.RHE) of rGO-Sb2Se3 is more negative than the hydrogen evolution potential (0 V vs.RHE), it can be applied as a novel photocathode used to photoreduce H2O to produce hydrogen, which has a promising prospect.
Key words: potentiostatic electrodeposition; Sb2Se3; rGO; photoelectrochemical
