(1. 義烏工商職業(yè)技術(shù)學(xué)院，金華 322000；
2. 西南石油大學(xué) 工程學(xué)院，南充 637001；
3. 北京航空航天大學(xué) 機(jī)械工程及自動(dòng)化學(xué)院，北京 100084)
摘 要: 納米Ag燒結(jié)因具有優(yōu)異的導(dǎo)熱和耐高溫性，將是第三代寬禁帶半導(dǎo)體芯片封裝的理想的連接材料，如何選擇合適的第二相以穩(wěn)定高溫服役過(guò)程中燒結(jié)層組織的演變，是當(dāng)前Ag燒結(jié)技術(shù)面臨的重要挑戰(zhàn)之一。本文采用碳納米管-石墨烯(CNT-G)來(lái)增強(qiáng)納米Ag焊膏，通過(guò)分析燒結(jié)組織和接頭剪切性能，研究添加相后對(duì)燒結(jié)接頭的影響規(guī)律。結(jié)果表明：CNT-G增強(qiáng)納米Ag焊膏的分解溫度為250 ℃，焊膏中碳納米管、石墨烯和Ag的含量為93%（質(zhì)量分?jǐn)?shù)）。隨著燒結(jié)溫度升高，大量顆粒之間形成燒結(jié)頸，使得燒結(jié)層的致密度逐漸提高，電阻率逐漸降低。CNT-G增強(qiáng)的納米Ag焊膏可以在溫度≥230 ℃、燒結(jié)壓力5 MPa下實(shí)現(xiàn)SiC芯片和基板連接，其燒結(jié)層與芯片和基板都形成了良好冶金結(jié)合。
關(guān)鍵字: 納米Ag焊膏；燒結(jié)連接；SiC芯片；微觀組織
（1. Yiwu Industrial and Commercial College, Jinhua 322000, China;
2. School of Engineering, Southwest Petroleum University, Nanchong 637001, China;
3. School of Mechanical Engineering& Automation, Beihang University, Beijing 100084, China）
Abstract:Nano-Ag sintering is an ideal sintering materials for third-generation wide-band gap semiconductor chip packaging due to its excellent thermal conductivity and high temperature resistance. How to choose a suitable second phase to stabilize the evolution of the sintered layer structure during high-temperature operation is one of the important challenges of Ag sintering technology. In this paper, carbon nanotube-graphene (CNT-G) was used to reinforce the nano-Ag paste. The sintered microstructure, shear strength, and the influence of the added phase were analyzed. Results show that the decomposition temperature of CNT-G reinforced nano-Ag paste is 250 ℃, and the content of Ag and CNT-G is 93% (mass fraction). As sintering temperature increases, more and more particles form sintering necks, which gradually increases the density of the sintered body. The CNT-G reinforced nano-Ag paste can realize bonding SiC chip and DBC substrate at temperature of ≥230 ℃ and sintering pressure of 5 MPa.
Key words: nano-Ag paste; sintering; SiC chip; microstructure
