(山東理工大學 材料科學與工程學院，淄博 255000)
摘 要: 以SnCl4·5H2O和SnCl2·2H2O為Sn源，分別以SnF2、SbCl3和La(NO3)3·6H2O為摻雜劑，采用溶膠-凝膠-氣相沉積法制備了SnO2基導電膜，主要研究摻雜劑的摻入對薄膜的表面形貌、微觀晶體結(jié)構(gòu)及光電性能的影響，探討其摻雜機理。通過四探針電阻率/方阻測試儀、雙光束紫外可見分光光度計、掃描電子顯微鏡、X射線粉末衍射儀和X射線光電子能譜分析系統(tǒng)等設(shè)備對SnO2基導電膜進行測試分析。結(jié)果表明：采用3種摻雜劑制備的SnO2基導電膜均為四方金紅石結(jié)構(gòu)，其表面形貌分別為金字塔狀、貝殼狀以及不規(guī)則多面體狀。其中SnO2:Sb導電膜的性能最好，當以摻雜量為12%(摩爾比)的SbCl3為摻雜劑時，SnO2基導電膜的電阻率為1.36×10-3 Ω·cm，透射率為78.9%，綜合光電性能指數(shù)為61.87×10-4 Ω-1。另外，不同摻雜元素的摻雜類型不同，對能級結(jié)構(gòu)、晶胞結(jié)構(gòu)、表面形貌、綜合光電性能的影響也不同，且n型摻雜劑改性效果優(yōu)于p型摻雜劑。
關(guān)鍵字: SnO2基導電膜；光電性能；摻雜劑；摻雜機理
（School of Materials Science and Engineering, Shandong University of Technology, Zibo 255000, China）
Abstract:The SnO2-based films were prepared by a self-innovative sol-gel-vapor deposition method, taking F, Sb and La as the dopant of the representative of non-metallic, metalloid, and rare earth elements, respectively. SnO2-based films were tested and analyzed using four-probe resistivity/square resistance tester, dual-beam ultraviolet-visible spectrophotometer, scanning electron microscopy, X-ray powder diffractometer, and X-ray photoelectron spectroscopy. The surface morphology, microcrystalline structure and photoelectric properties of SnO2-based films with different dopants were studied, and their mechanism was discussed. The results show that the doped SnO2 films all are tetragonal rutile phase, and the surface morphologies of the SnO2 films with SnF2, SbCl3 and La(NO3)3·6H2O doped are pyramidal, shell-like and irregular polyhedrons, respectively. The resistivity of SnO2-based film is 1.36×10-3 Ω？cm, the transmittance is 78.9%, and the comprehensive photoelectric property is 61.87×10-4 Ω-1 when the dopant is 12% (mole ratio) SbCl3, and its properties are the best of all samples. The difference in energy level structure, microstructure, surface morphology and photoelectric properties of SnO2-based films is mainly attributed to the different doping types of different dopants. And the modification effect of n-type dopants is better than that of p-type dopants.
Key words: SnO2-based conductive films; photoelectric property; dopants; doping mechanism
