(1. 南京工程學(xué)院 材料科學(xué)與工程學(xué)院，南京 211167；
2. 江蘇省先進(jìn)結(jié)構(gòu)材料與應(yīng)用技術(shù)重點(diǎn)實(shí)驗(yàn)室，南京 211167)
摘 要: 采用熔劑保護(hù)法制備了不同Nd含量的Mg-Nd二元及Mg-Nd-Ni三元儲(chǔ)氫合金，通過高能球磨對(duì)鑄態(tài)合金進(jìn)行組織細(xì)化，制備鎂基納米復(fù)合儲(chǔ)氫顆粒，采用X射線衍射儀(XRD)、掃描電子顯微鏡(SEM)、透射電子顯微鏡(TEM)、自動(dòng)Sievert設(shè)備(PCT)及差示掃描量熱儀(DSC)等系統(tǒng)研究了Ni、Nd添加及活化過程中氫壓對(duì)合金微觀組織及吸放氫動(dòng)力學(xué)的影響。結(jié)果表明：Ni、Nd含量會(huì)影響球磨后合金的顆粒尺寸，Mg12Nd與H反應(yīng)生成的NdH3會(huì)穩(wěn)定存在，NdH3明顯促進(jìn)Mg的吸氫，而Mg2Ni明顯改善MgH2的放氫。活化過程中超高的氫壓可明顯細(xì)化第二相顆粒，在3 MPa氫壓下活化后，合金中NdH3相的顆粒尺寸在50~200 nm之間，而在8 MPa氫壓下活化后，NdH3的顆粒尺寸在10 nm左右。相較于在3 MPa氫壓下活化的合金顆粒，在8 MPa氫壓下活化后樣品的吸放氫速率得到明顯改善。
關(guān)鍵字: 鎂合金；儲(chǔ)氫材料；高能球磨；吸放氫速率
（1. School of Material Science and Engineering, Nanjing Institute of Technology, Nanjing 211167, China;
2. Jiangsu Key Laboratory of Advanced Structural Materials and Application Technology, Nanjing Institute of Technology, Nanjing 211167, China）
Abstract:Mg-Nd binary and Mg-Nd-Ni ternary alloys with different Nd contents were prepared in graphite crucible under the protection of covering agent. High energy ball-milling was performed to obtain Mg-based nanocomposite hydrogen storage materials. The phase components, microstructure and hydrogen storage properties were systematically investigated by XRD, SEM, TEM, PCT and DSC. The results show that the contents of Ni and Nd influence the particle size of ball milled samples. Mg2Ni significantly favors desorption process, while NdH3 is more conducive to absorption. Ultrahigh hydrogen pressure during activation process can refine the microstructure of Mg alloys. The particle size of NdH3 is in the range of 50-200 nm for Mg-15Nd alloy activated under 3 MPa hydrogen pressure, while it is about 10 nm for Mg-15Nd alloy activated under 8 MPa hydrogen pressure. The sample activated under 8 MPa hydrogen pressure shows superior absorption and desorption kinetics than that activated under 3 MPa hydrogen pressure.
Key words: Mg alloys; hydrogen storage materials; high-energy ball milling; absorption and desorption kinetics
