Transactions of Nonferrous Metals Society of China The Chinese Journal of Nonferrous Metals

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中國(guó)有色金屬學(xué)報(bào)

ZHONGGUO YOUSEJINSHU XUEBAO

第23卷    第4期    總第169期    2013年4月

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文章編號(hào):1004-0609(2013)04-0950-07
硅酸鈉濃度對(duì)鋁合金微弧氧化起弧過(guò)程能量消耗的影響
葛延峰,蔣百靈,時(shí)惠英

(西安理工大學(xué) 材料科學(xué)與工程學(xué)院,西安 710048)

摘 要: 利用脈沖微弧氧化電源研究1015鋁合金于不同濃度硅酸鈉水溶液中的起弧過(guò)程,借助掃描電子顯微鏡和電化學(xué)測(cè)試方法分析硅酸鈉濃度對(duì)起弧瞬間膜層微觀結(jié)構(gòu)和表面阻值的影響,并根據(jù)電壓變化曲線計(jì)算起弧過(guò)程的能量消耗。結(jié)果表明:當(dāng)溶液中硅酸鈉濃度為0時(shí),即使極間電壓升至1 500 V,鋁合金表面仍無(wú)微弧放電現(xiàn)象出現(xiàn),并發(fā)生電解腐蝕;隨著硅酸鈉濃度由0.25 g/L增加至10 g/L時(shí),鋁合金表面發(fā)生微弧放電現(xiàn)象所需的電壓由1 217 V降低至351 V,通電至起弧的等待時(shí)間由270 s縮短至40 s,起弧瞬間膜層表面放電微孔數(shù)量增多;鋁合金表面形成阻值達(dá)105數(shù)量級(jí)的高阻抗膜是發(fā)生微弧放電現(xiàn)象的前提,硅酸鈉濃度的增大有利于形成高阻抗膜;鋁合金微弧氧化起弧過(guò)程的能量消耗隨著電解液中硅酸鈉濃度的增大而減小,并在硅酸鈉濃度為10 g/L時(shí)達(dá)到最小值,僅為16 kJ/dm2

 

關(guān)鍵字: 鋁合金;微弧氧化;硅酸鈉;起弧過(guò)程;能量消耗

Effect of Na2SiO3 concentration on energy consumption during arcing process of micro-arc oxidation on aluminum alloys
GE Yan-feng, JIANG Bai-ling, SHI Hui-ying

School of Materials Science and Engineering, Xi’an University of Technology, Xi’an 710048, China

Abstract:The arcing process of micro-arc oxidation (MAO) on 1015 alloys aluminum (Al) using pulse power source in aqueous solutions with different Na2SiO3 concentrations was studied. The morphologies and surface resistance of initial films at arcing moment were analyzed and observed using scanning electron microscope (SEM) and electrochemical test, respectively. The effect of Na2SiO3 concentration on energy consumption of arcing process during MAO was calculated based on change curve of voltage. The results indicate that there is no arcing phenomenon but electrolytic etching on Al samples when the Na2SiO3 concentration is 0 and voltage is 1 500 V. With Na2SiO3 solution concentration increasing from 0.25 g/L to 10 g/L, arcing voltage dropping from 1 217 V to 351 V, arcing time reducing from 270 s to 40 s , the quantity of microspores on surface of initial films increases during arcing process of MAO. The high resistance film with resistance up to 105 order of magnitude formed on the surface of Al samples is the premise of arcing phenomenon emerging in MAO process, and higher Na2SiO3 solution concentration is beneficial to forming high resistance film. The energy consumption of arcing process is diminished with Na2SiO3 solution concentration increasing, and minimum value is 16 kJ/dm2 when Na2SiO3 concentration is 10 g/L.

 

Key words: aluminum alloys; micro-arc oxidation; sodium silicate; arcing process; energy consumption

ISSN 1004-0609
CN 43-1238/TG
CODEN: ZYJXFK

ISSN 1003-6326
CN 43-1239/TG
CODEN: TNMCEW

主管:中國(guó)科學(xué)技術(shù)協(xié)會(huì) 主辦:中國(guó)有色金屬學(xué)會(huì) 承辦:中南大學(xué)
湘ICP備09001153號(hào) 版權(quán)所有:《中國(guó)有色金屬學(xué)報(bào)》編輯部
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