(1. 西安建筑科技大學(xué) 冶金工程學(xué)院，西安 710005；
2. 陜西省冶金工程技術(shù)研究中心，西安 710055)
摘 要: 采用循環(huán)伏安(CV)和X射線光電子能譜(XPS)對(duì)硫砷銅礦在pH值為9.2溶液中的電化學(xué)氧化過(guò)程以及電位對(duì)硫砷銅礦表面氧化相的構(gòu)成影響進(jìn)行研究。結(jié)果表明：硫砷銅礦在電位0.17 V (氧化峰A1電位范圍)氧化，主要發(fā)生Cu部分離開礦物表面進(jìn)入溶液形成缺銅硫化物(Cu3-xAsS4)的初步氧化過(guò)程，表面不存在Cu(Ⅱ)的氧化相，S氧化形成少量的 ，As不發(fā)生氧化。當(dāng)氧化電位提高到0.3 V(氧化峰A2電位范圍)，大量的Cu離開礦物表面進(jìn)入溶液，表面仍然不存在Cu(Ⅱ)的氧化相，可能存在少量的CuSO4，但處于檢測(cè)下限，表面存在一定量的 ，不存在As的氧化相。當(dāng)電位提高到0.5 V(氧化峰A2電位范圍)，發(fā)生Cu和As的氧化沉積過(guò)程，分別在礦物表面形成Cu(Ⅱ)氧化相(Cu(OH)2，CuSO4)和As2O3氧化相。此外，表面還存在一定的 相。當(dāng)電位提高到0.8V(氧化峰A3電位范圍)，表面形成一定量的Cu(Ⅱ)氧化相(Cu(OH)2和CuSO4)，As仍然以As2O3的形式存在，S除形成CuSO4外，部分仍以 的形式存在。
關(guān)鍵字: 電化學(xué)氧化；硫砷銅礦；親水相；疏水相；XPS
（1. School of Metallurgical Engineering, Xi’an University of Architecture and Technology, Xi’an 710055, China;
2. Shaanxi Province Metallurgical Engineering and Technology Research Centre, Xi’an 710055, China）
Abstract:The electrochemical oxidation process of enargite in solution at pH=9.2, and influence of potential on the chemical composition of surface phase were studied by cyclic voltammetry (CV) and X-ray photoelectron spectroscopy (XPS). The results show that the primary oxidation process relates to the formation of copper-deficient(Cu3-xAsS4) sulfide induced by the dissolution of partial Cu into solution mainly occurs on enargite at the oxidation potential of 0.17 V (in the potential range of oxidation peak A1), and these is no Cu(Ⅱ) oxidation products existed in the surface film of enargite. A small amount of forms through the S oxidation, and the As oxidation do not occur. When the oxidation potential increases to 0.3V(in the potential range of oxidation peak A2), plenty of Cu left the surface of sample and dissolves into solution. There are still no existence of the oxidation products of Cu(Ⅱ). A small amount of CuSO4 might exist, but its content is below low limit of detection. The Sn- phase is present in the surface film, but there are no existence of the oxidation products of As. The oxidation and deposition processes of Cu and As occur at the oxidation potential of 0.5 V (in the potential range of oxidation peak A2), and it results in the formation of the Cu(Ⅱ) oxidation products(Cu(OH)2 and CuSO4) and As2O3. Additionally, some Sn- phase is still present in the surface film. A certain amount of Cu(Ⅱ) oxidation product of Cu(OH)2 and CuSO4, are formed on sample when the oxidation potential increases to 0.8V(in the potential range of oxidation peak A3). The As element is still present in the form of As2O3 and parts of S element exists in the form of besides some S element is oxidized to CuSO4.
Key words: electrochemical oxidation; enargite; hydrophilic phase; hydrophobic phase; XPS
