中國有色金屬學(xué)報(bào)(英文版)
Transactions of Nonferrous Metals Society of China
| Vol. 26 No. 6 June 2016 |
（1. College of Materials and Chemical Engineering, China Three Gorges University, Yichang 443002, China;
2. Guangxi Key Laboratory of New Energy and Building Energy Saving,
Guilin University of Technology, Guilin 541004, China）
Abstract:Al-doped ZnO thin films were prepared on glass substrate using an ultra-high density target by RF magnetron sputtering at room temperature. The microstructure, surface morphology, optical and electrical properties of AZO thin films were investigated by X-ray diffractometer, scanning electron microscope, UV-visible spectrophotometer, four-point probe method, and Hall-effect measurement system. The results showed that all the films obtained were polycrystalline with a hexagonal structure and average optical transmittance of AZO thin films was over 85 % at different sputtering powers. The sputtering power had a great effect on optoelectronic properties of the AZO thin films, especially on the resistivity. The lowest resistivity of 4.5×10-4 Ω·cm combined with the transmittance of 87.1% was obtained at sputtering power of 200 W. The optical band gap varied between 3.48 and 3.68 eV.
Key words: AZO thin film; microstructure; optoelectronic properties; RF magnetron sputtering
