(1. 中南大學(xué) 粉末冶金國家重點(diǎn)實(shí)驗(yàn)室，長沙 410083；2. 中南大學(xué) 材料科學(xué)與工程學(xué)院，長沙 410083)
摘 要: 封裝石英管真空熔煉合成CuIn0.7Ga0.3Se2(CIGS)塊體，再采用電子束蒸鍍此塊體，制備用于太陽電池吸收層的CIGS薄膜，然后對(duì)薄膜進(jìn)行不同溫度的真空退火處理。分別采用XRD、EDS、SEM及光譜分析等方法，研究CIGS塊體和退火薄膜的表面形貌、晶體結(jié)構(gòu)、成分或者光電性能。結(jié)果表明：在1200 ℃、保溫2 h后，采用真空熔煉獲得結(jié)晶性能較好、單一黃銅礦結(jié)構(gòu)的CuIn0.7Ga0.3Se2塊體。隨著退火溫度的升高，薄膜中In-Se雜質(zhì)相分解，從而獲得單一相的CIGS薄膜；并且顆粒不斷長大，達(dá)到1.0~3.5 μm；成分和光學(xué)禁帶不斷得到優(yōu)化。600 ℃退火薄膜是比較符合理想太陽電池要求的吸收層材料。
關(guān)鍵字: 太陽電池；CuIn0.7Ga0.3Se2；真空熔煉；電子束蒸鍍；退火處理
（1. State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083, China;
2. School of Materials Science and Engineering, Central South University, Changsha 410083, China）
Abstract:The CuIn0.7Ga0.3Se2 (CIGS) thin films used as absorber layers of solar cell were deposited by electron-beam evaporation utilizing CIGS bulk synthesized by quartz-tube vacuum smelting, followed by annealing treatment in vacuum atmosphere at different temperatures. The performances of CIGS bulk and annealed films on the surface morphology, compositions, crystal microstructure and photoelectric property were studied by X-ray diffractometry (XRD), scanning electron microscopy (SEM), energy dispersive spectrometry (EDS) or spectroscopic analysis, respectively. The results show that ideal CuIn0.7Ga0.3Se2 bulk with good crystallization property and single chalcopyrite structure is obtained by vacuum smelting at 1200 ℃for 120 min. With the increase of annealing temperature, single phase CIGS presents, accompanying by decomposition of In-Se impurity phase. Meanwhile, the grain size continuously grows up to 1.0-3.5 μm, and the composition and optical band gap are gradually optimized. Therefore, the as-annealed film at 600 ℃ is in much more consistent with the absorber layers material of ideal solar cell.
Key words: solar cell; CuIn0.7Ga0.3Se2; vacuum melting; electron-beam evaporation; annealing treatment
