(1. 國網電力科學研究院武漢南瑞有限責任公司，武漢430070；
2. 國家電網公司，北京 100031)
摘 要: 利用高溫空氣氧化處理和酸洗相結合的工藝對多壁碳納米管進行提純，提純后粉體經過SEM和熱重表征(TGA)證明基本上消除了多壁碳納米管中的金屬催化劑粒子和無定形碳等雜質，碳納米管純度得到大幅度提升。隨后在純化后的多壁碳納米管表面進行鹵族元素的熱摻雜，制備得到鹵素摻雜多壁碳納米管粉體。結果表明：經鹵族元素的摻雜后，多壁碳納米管粉體表面含有雙鹵族元素(Cl、I)。通過對各階段粉體進行方片電阻測量發(fā)現：原始多壁碳納米管電阻為9 Ω，提純后多壁碳納米管電阻為5.7 Ω；經鹵素摻雜后多壁碳納米管電阻為3 Ω，電阻明顯下降，經過各階段處理后最終多壁碳納米管電阻較原始多壁碳納米管電阻降低66.7%。
關鍵字: 多壁碳納米管；一氯化碘；摻雜；電阻
（1. State Grid Electric Power Research Institute, Wuhan Nari Co., Ltd., Wuhan 430070, China;
2. State Grid Cooperation of China, Beijing 100031, China）
Abstract:Purified multiwalled carbon nanotubes were prepared by the combinative technology of high temperature air oxidation treatment and acid pickling. Metal catalyst particles and amorphous carbon were mostly removed by the representation of SEM and TGA, resulting in a high purity of the purified multiwalled carbon nanotubes. Subsequently, the surfaces of purified multiwalled carbon nanotubes were doped by halogen elements through high temperature diffusion to obtain the doped multiwalled carbon nanotubes. The results show that Cl and I elements are detected on the surfaces of the doped multiwalled carbon nanotubes. The resistances of pristine MWCNT, purified MWCNT and halogen doped MWCNT are 9 Ω, 5.7 Ω and 3 Ω, respectively, through testing their square slice resistance, their resistances obviously decrease, reducing to 66.7% of that of the original multiwalled carbon nanotube.
Key words: multiwalled carbon nanotubes; ICl; dopping; resistance
