(大連理工大學(xué) 材料科學(xué)與工程學(xué)院，大連 116024)
摘 要: 電子產(chǎn)品的日益發(fā)展要求更高的封裝密度、更好的性能和更小的尺寸，使得電子器件所承載的功率密度顯著升高，由此產(chǎn)生嚴(yán)重的焦耳熱問(wèn)題，導(dǎo)致作為主要散熱通道的微互連焊點(diǎn)內(nèi)將產(chǎn)生較高的溫度梯度，這將誘發(fā)金屬原子的熱遷移，并引起嚴(yán)重的可靠性問(wèn)題。對(duì)近年來(lái)有關(guān)Sn-Pb、Sn-Ag、Sn-Ag-Cu、Sn-Bi和Sn-Zn等微互連焊點(diǎn)中金屬原子的熱遷移行為和關(guān)鍵問(wèn)題進(jìn)行綜合分析，總結(jié)熱遷移對(duì)微互連界面反應(yīng)的影響，闡述金屬原子熱遷移的機(jī)理和驅(qū)動(dòng)力，并歸納傳遞熱Q*的計(jì)算方法及微互連焊點(diǎn)中主要金屬元素的Q*值。最后，指出微互連焊點(diǎn)熱遷移研究存在的主要問(wèn)題，并對(duì)其未來(lái)研究發(fā)展趨勢(shì)進(jìn)行了展望。
關(guān)鍵字: 電子封裝；互連焊點(diǎn)；釬料；熱遷移；界面反應(yīng)；金屬間化合物
（School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024, China）
Abstract:The electronic products are increasingly demanding for higher packing density, better performance and smaller size, resulting in significant increase of power density applied on devices. The issue of Joule heating becomes more severe and a temperature gradient will form in the solder joints which act as the main heat dissipation channel. As a result, thermomigration of metal atoms will occur, which causes serious reliability problems of the solder joints. The thermomigration of metal atoms in Sn-Pb, Sn-Ag, Sn-Ag-Cu, Sn-Bi, Sn-Zn micro interconnect solder joints as well as the key issues were analyzed synthetically. The effect of thermomigration on interfacial reaction was included. The mechanism and the driving force of thermomigration of metal atoms were explained. The calculation methods for heat transport (Q*) and the values of Q* of main metal elements in solder joints were summarized. The main issues and trends of the studies on thermomigration in micro interconnect solder joints were finally proposed.
Key words: electronic packaging; interconnect solder joint; solder; thermomigration; interfacial reaction; intermetallic compound
