(中南大學(xué) 材料科學(xué)與工程學(xué)院，長沙 410083)
摘 要: 采用凝膠注模成型技術(shù)制備ZnO陶瓷坯體，并在較低溫度下常壓燒結(jié)后獲得相對密度達(dá)98.6%、晶粒尺寸為1.35 μm的陶瓷靶材，研究工藝參數(shù)對ZnO陶瓷靶材的相對密度、晶粒生長和電阻率的影響。結(jié)果表明：ZnO陶瓷靶材的相對密度隨燒結(jié)溫度升高而增大，在1050 ℃時達(dá)到最大值。適當(dāng)增大升溫速率或延長保溫時間都有利于提高其相對密度。晶粒尺寸隨升溫速率的升高而減小，隨保溫時間的延長而增大。提高燒結(jié)溫度和增加保溫時間都可降低ZnO陶瓷靶材的電阻率。ZnO陶瓷靶材經(jīng)1400 ℃燒結(jié)3 h后，獲得的電阻率最小(為1.75×10-2 Ω·cm)。
關(guān)鍵字: ZnO陶瓷靶材；凝膠注模；常壓燒結(jié)；相對密度；晶粒尺寸；電阻率
（School of Materials Science and Engineering, Central South University, Changsha 410083, China）
Abstract:ZnO ceramic target with the relative density of 98.6% and grain size of 1.35 μm was fabricated by gelcasting and conventional sintering at low temperature. The effects of processing on the relative density, grain growth and electrical resistivity of ZnO ceramic target were studied. The results show that the relative density of ZnO ceramic targets increases with increasing the sintering temperature, and reaches the maximum value at 1050 ℃. The relative density of ZnO ceramic targets increases with increasing the heating rate or duration time. The grain sizes decrease with increasing the heating rate, while increase with increasing the duration time. With increasing the sintering temperature and duration time, the electrical resistivity of ZnO ceramic target reduces. The low electrical resistivity of 1.75×10-2 Ω·cm is achieved at the temperature of 1400 ℃.
Key words: ZnO ceramic target; gelcasting; conventional sintering; relative density; grain size; electrical resistivity
