(1. 昆明理工大學(xué) 省部共建復(fù)雜有色金屬資源清潔利用國(guó)家重點(diǎn)實(shí)驗(yàn)室，昆明 650093；
2. 昆明理工大學(xué)冶金與能源工程學(xué)院，昆明 650093；
3. 云南冶金集團(tuán)總公司 技術(shù)中心，昆明650031)
摘 要: 根據(jù)相關(guān)熱力學(xué)數(shù)據(jù)，首先計(jì)算并擬合得到Si-Cl-H三元系中氣相Cl與H原子的摩爾比(nCl/nH)與反應(yīng)達(dá)到平衡時(shí)的氣相Si與Cl原子的摩爾比 (nSi/nCl)Eq的關(guān)系。為了得到合理的SiCl4 (STC)和SiHCl3 (TCS)的進(jìn)料配比，詳細(xì)分析TCS與STC的3種配比(nTCS/nSTC分別為1/4、1和4)時(shí)溫度、壓強(qiáng)以及進(jìn)料配比對(duì)Si沉積率的影響。結(jié)果表明：以STC和TCS的混合物為原料時(shí)，最佳溫度為1400K，壓強(qiáng)為0.1MPa。為了保證硅產(chǎn)率達(dá)到可工業(yè)化生產(chǎn)的35%以上，當(dāng)原料摩爾比(nTCS/nSTC)為1/4時(shí)，原料中nCl/nH為0.055；當(dāng)原料摩爾比(nTCS/nSTC)為1時(shí)，原料中nCl/nH比為0.07；當(dāng)原料摩爾比(nTCS/nSTC)為4時(shí)，原料中nCl/nH為0.09。隨著硅原料中TCS所占比例的增大，在較高的nCl/nH下，就可以得到較高的硅產(chǎn)率。最后分析得到：當(dāng)選定原料配比時(shí)，要得到合理的硅產(chǎn)率，所需要控制nCl/nH的范圍；當(dāng)進(jìn)料中nCl/nH一定時(shí)，要得到合理的硅產(chǎn)率，需選擇原料配比的理想范圍。
關(guān)鍵字: 西門子法；SiHCl3；SiCl4；多晶硅；硅產(chǎn)率
（1. National Key Laboratory for Clean Application of Complex Non-ferrous Metal Resources,
Kunming University of Science and Technology, Kunming 650093, China;
2. Faculty of Metallurgical and Energy Engineering, Kunming University of Science and Technology, Kunming 650093, China？
3. Technology Center, Yunnan Metallurgical Group, Kunming 650031, China）
Abstract:Based on the thermodynamic data for related pure substances, the relation of (nCl/nH)Eq (i.e. the mole ratio of Si to Cl at equilibrium), and the feeding mole ratio of Cl to H (nCl/nH) was plotted in Si-Cl-H system. Then, the thermodynamics of silicon deposition process when n(TCS)/n(STC) of 1/4, 1 and 4 were studied in order to obtain the reasonable ratio of STC to TCS. The effects of temperature, pressure and feeding mole ratio of STC to TCS on silicon yield were investigated. When the mixture of STC and TCS is fed to Siemens reactor, the best conditions are obtained as following: the temperature of 1400K, the pressure of 0.1MPa. In order to maintain the higher silicon yield (higher than 35%), the nCl/nH should be 0.055 when the n(TCS)/n(STC) is 1/4，0.07 when the n(TCS)/n(STC) is 1 and 0.09 when n(TCS)/n(STC) is 4. The reasonable silicon yield can be obtain under higher nCl/nH when n(TCS)/n(STC) is higher. Finally, the range of nCl/nH is obtained to maintain the reasonable silicon yield when n(TCS)/n(STC) is a constant. The range of n(TCS)/n(STC) is also obtained to maintain the reasonable silicon yield when nCl/nH in the feed is a constant.
Key words: Siemens process; SiHCl3; SiCl4; polysilicon; silicon yield
