(太原理工大學(xué) 材料科學(xué)與工程學(xué)院，太原 030024)
摘 要: 以銅箔為基底采用化學(xué)氣相沉積法(CVD)制備石墨烯透明導(dǎo)電薄膜，利用SEM、RAMAN、UV和四探針測試儀對產(chǎn)物微觀形貌與結(jié)構(gòu)、透光性和導(dǎo)電性能進行表征，討論反應(yīng)溫度和氫氣流量對石墨烯薄膜結(jié)構(gòu)及性能的影響。結(jié)果表明：在一定范圍內(nèi)調(diào)節(jié)氫氣流量均可得到石墨烯薄膜；當(dāng)反應(yīng)溫度為1000 ℃時，制備的石墨烯缺陷和層數(shù)較少，透光性較高。隨溫度升高；石墨烯薄膜產(chǎn)生的缺陷和層數(shù)減少，石墨烯的薄層電阻隨生長溫度的升高呈線性下降趨勢。石墨烯透明薄膜的微觀結(jié)構(gòu)與導(dǎo)電性相互關(guān)系的研究為其進一步應(yīng)用于寬波長范圍的窗口電極材料提供了理論基礎(chǔ)。
關(guān)鍵字: 石墨烯；透明導(dǎo)電薄膜；化學(xué)氣相沉積；導(dǎo)電率
（College of Material Science and Engineering, Taiyuan University of Technology, Taiyuan 030024, China）
Abstract:Graphene transparent conductive films were prepared by CVD method using copper foils as substrates. The morphology and structure of sample were tested by SEM and Raman spectroscopy, and the optical and electrical properties were analyzed by UV spectrometer and Four probe instrument. The effects of temperature and hydrogen flow on the structure and properties of the treated graphene were studied. The results show that the high-quality few-layer graphene could be synthesized at 1000 ℃ with hydrogen flow in a moderate range. The sheet resistance of graphene indicates a linear downtrend with increasing the growth temperature. With increasing the temperature, the defect density and layers of graphene decrease, which results in an increase in the electrical conductivity. The study on the internal relations between structure and properties of graphene would promote its further application as a window electrode material with wider wavelength range.
Key words: graphene; transparent conductive film; chemical vapor deposition; electrical conductivity
