中國有色金屬學(xué)報(英文版)
Transactions of Nonferrous Metals Society of China
| Vol. 24 No. 6 June 2014 |
（1. School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China;
2. Science and Technology on ASIC Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China）
Abstract:Peritectic reaction was studied by directional solidification of Cu-Ge alloys. A larger triple junction region of peritectic reaction was used to analyze the interface stability of the triple junction region during peritectic reaction. Under different growth conditions and compositions, different growth morphologies of triple junction region are presented. For the hypoperitectic Cu-13.5%Ge alloy, as the pulling velocity (v) increases from 2 to 5 μm/s, the morphological instability of the peritectic phase occurs during the peritectic reaction and the remelting interface of the primary phase is relatively stable. However, for the hyperperitectic Cu-15.6%Ge alloy with v=5 μm/s, the nonplanar remelting interface near the trijunction is presented. The morphological stabilities of the solidifying peritectic phase and the remelting primary phase are analyzed in terms of the constitutional undercooling criterion.
Key words: peritectic reaction; Cu-Ge alloys; directional solidification; microstructure; constitutional undercooling
