Transactions of Nonferrous Metals Society of China The Chinese Journal of Nonferrous Metals

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中國(guó)有色金屬學(xué)報(bào)

ZHONGGUO YOUSEJINSHU XUEBAO

第23卷    第11期    總第176期    2013年11月

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文章編號(hào):1004-0609(2013)11-3154-11
內(nèi)氧化Cu/Al2O3界面熱力學(xué)與雜質(zhì)效應(yīng)
江 勇1, 2,藍(lán)國(guó)強(qiáng)1,王怡人1,周松松1

(1. 中南大學(xué) 材料科學(xué)與工程學(xué)院,長(zhǎng)沙 410083;
2. 中南大學(xué) 有色金屬材料教育部重點(diǎn)實(shí)驗(yàn)室,長(zhǎng)沙 410083
)

摘 要: 基于第一性原理方法,研究溫度、原子化學(xué)配比、Al 活度、O活度和雜質(zhì)偏聚對(duì)內(nèi)氧化Cu/Al2O3界面的影響作用。計(jì)算得到的界面相圖及相應(yīng)能量學(xué)結(jié)果表明:界面平衡相結(jié)構(gòu)隨制備氣氛的變化而變化;富O相界面的結(jié)合強(qiáng)度最高,富Al相界面的結(jié)合強(qiáng)度其次,它們均約3倍于理想化學(xué)配比相界面的結(jié)合強(qiáng)度;雜質(zhì)S對(duì)界面的危害性明顯,對(duì)富Al相和理想配比相界面具有強(qiáng)烈的偏聚能力,且嚴(yán)重削弱界面強(qiáng)度(約可達(dá)65%),并降低氧化鋁顆粒尺寸的穩(wěn)定性,但S不能向富O 相界面偏聚;相較于S,另一種雜質(zhì)P向富Al相和理想配比相界面的偏聚能力不強(qiáng),偏聚后對(duì)界面的危害性也較S弱。但P能向富O相界面偏聚,使界面強(qiáng)度嚴(yán)重降低。

 

關(guān)鍵字: Cu/Al2O3界面;內(nèi)氧化;結(jié)合強(qiáng)度;雜質(zhì)偏聚;第一性原理

Interfacial thermodynamics and impurity effects on internally oxidized Cu/Al2O3 interface
JIANG Yong1, 2, LAN Guo-qiang1, WANG Yi-ren1, ZHOU Song-song1

1. School of Materials Science and Engineering, Central South University, Changsha 410083, China;
2. Key Laboratory of Nonferrous Metal Materials, Ministry of Education, Central South University, Changsha 410083, China

Abstract:Based on the first-principles study, the effects of temperature, interfacial stoichiometry, Al activity, O activity and impurity segregation on the internally oxidized Cu/Al2O3 interface were studied. The calculated interfacial phase diagrams and corresponding energetics suggest that, the equilibrium interface structure varies with the ambient; the O-rich type interface, followed by the Al-rich type, has significantly stronger adhesion than its stoichiometric counterpart. Impurity S strongly segregates to Al-rich and stoichiometric type interfaces, degrades the adhesion (up to about 65%) and also reduces the size stability of alumina particles in Cu, while the O-rich interface is immunized from S segregation. P, as another common impurity in Cu, has a limited capability to segregate to the Al-rich and the stoichiometric interfaces, but it can segregate to the O-rich interface and reduce the adhesion seriously.

 

Key words: Cu/Al2O3 interface; internal oxidation; adhesion strength; impurity segregation; first principles

ISSN 1004-0609
CN 43-1238/TG
CODEN: ZYJXFK

ISSN 1003-6326
CN 43-1239/TG
CODEN: TNMCEW

主管:中國(guó)科學(xué)技術(shù)協(xié)會(huì) 主辦:中國(guó)有色金屬學(xué)會(huì) 承辦:中南大學(xué)
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