(江蘇科技大學(xué) 江蘇省先進(jìn)焊接技術(shù)重點(diǎn)實(shí)驗(yàn)室，鎮(zhèn)江 212003)
摘 要: 采用磁控濺射技術(shù)制備一系列不同負(fù)偏壓的TaN薄膜。分別采用掃描電子顯微鏡、X射線衍射儀、原子力顯微鏡、納米壓痕儀和高溫摩擦磨損儀研究不同負(fù)偏壓對(duì)單層TaN薄膜的微觀結(jié)構(gòu)、表面形貌、力學(xué)性能和摩擦性能的影響。結(jié)果表明：TaN薄膜主要為面心δ-TaN和斜方Ta4N晶體結(jié)構(gòu)，擇優(yōu)取向隨著負(fù)偏壓的不同而不同；當(dāng)負(fù)偏壓為80 V時(shí)，TaN薄膜的硬度和彈性模量均達(dá)到最大值，分別為30.103和317.048 GPa，并且此時(shí)薄膜的膜-基結(jié)合最強(qiáng)；常溫下單層TaN薄膜的摩擦因數(shù)與負(fù)偏壓關(guān)系不大，基本保持在0.64~0.68之間；高溫下，隨著溫度的升高，摩擦因數(shù)逐漸降低。
關(guān)鍵字: TaN薄膜；負(fù)偏壓；微觀結(jié)構(gòu)；摩擦性能
（Key Laboratory of Advanced Welding Technology of Jiangsu Province,
Jiangsu University of Science and Technology, Zhenjiang 212003, China）
Abstract:A series of TaN films were fabricated at various bias voltages by magnetron sputtering technique. Their microstructure, surface morphology, mechanical and friction properties were investigated by scanning electron microscope (SEM), X-ray diffraction (XRD), atomic force microscope (AFM), nano indentation tester and friction and wear tester, respectively. The results show that the structure of TaN is composed of cubic δ-TaN and orthorhombic Ta4N, while the preferred orientation changes with the bias voltage. When the bias voltage is 80 V, the hardness and elastic modulus of the films reach the maximum values, 30.103 and 317.048 GPa, respectively, and the interfacial adhesion is the strongest. At room temperature, the friction coefficients of the films that are influenced slightly by bias voltage vary between 0.64 and 0.68. At high temperatures, the friction coefficients of the films decrease with the increase of temperature.
Key words: TaN films; bias voltage; microstructure; friction properties
