(1. 廈門大學(xué) 材料學(xué)院，廈門 361005；
2. 昆明理工大學(xué) 真空冶金國家工程實驗室，昆明 650093)
摘 要: 采用自主設(shè)計的轉(zhuǎn)移弧等離子體發(fā)生裝置，對金屬硅進行電磁感應(yīng)加熱輔助等離子體熔煉除硼的研究；探索不同工藝條件如反應(yīng)氣體、熔煉時間和初始硼含量對除硼效果和硅損失的影響。結(jié)果表明：采用氬氣和水蒸氣混合氣體(Ar+H2O)作為反應(yīng)氣體比氬氣和氧氣混合氣體(Ar+O2)具有更好的除硼效果；隨H2O含量的增加，硼的去除率與硅損失率都呈線性增加；采用Ar+1.5%H2O(體積分數(shù))等離子體時，硼的去除率在30 min后達到最大值，其含量從22×10−6降至0.2×10−6(質(zhì)量分數(shù))，硅損失率約為0.5%/min；初始硼含量對除硼效果和硅損失率基本無影響。
關(guān)鍵字: 太陽能級多晶硅；電磁感應(yīng)；等離子體熔煉；除硼
（1. College of Materials, Xiamen University, Xiamen 361005, China;
2. National Engineering Laboratory for Vacuum Metallurgy, Kunming University of Science and Technology,
Kunming 650093, China）
Abstract:The removal of boron from metallurgical silicon was studied by plasma melting using electromagnetic induction heating with the independently designed transfer arc plasma generator. The effects of boron removal and silicon loss were investigated under different technological conditions of reacting gas, melting time and initial boron content. The results show that a mixture of argon and water vapor (Ar+H2O) as reaction gas is more effective for the boron removal than a mixture of argon and oxygen (Ar+O2), and both the boron elimination rate and silicon loss rate increase with the H2O content increasing; the boron elimination rate increases to the maximum by using Ar+1.5%H2O(volume fraction) plasma for 30 min, and the boron content is reduced from 22×10−6 to 0.2×10−6 (mass fraction), the silicon loss rate is about 0.5%/min, the initial boron content has no effects on the boron removal rate and silicon loss rate.
Key words: solar grade polycrystalline silicon; electromagnetic induction; plasma melting; boron removal
