(中南大學(xué) 冶金科學(xué)與工程學(xué)院，長(zhǎng)沙 410083)
摘 要: 采用Zn靶和ZnO(摻2% Al2O3(質(zhì)量分?jǐn)?shù)))陶瓷靶在玻璃襯底上共濺射沉積Al摻雜ZnO薄膜，即ZnO:Al透明導(dǎo)電薄膜，研究Zn靶濺射功率(0~90 W)和襯底溫度(室溫、100 ℃和200 ℃)對(duì)薄膜結(jié)構(gòu)、形貌、光學(xué)和電學(xué)性能的影響。結(jié)果表明：按雙靶共濺射工藝制備的ZnO:Al薄膜的晶體結(jié)構(gòu)均為六角纖鋅礦結(jié)構(gòu)，且隨著Zn靶濺射功率的增加，薄膜的結(jié)晶質(zhì)量呈現(xiàn)出先改善后變差的規(guī)律，薄膜中的載流子濃度逐漸升高，電阻率逐漸降低，而薄膜的光學(xué)性能受其影響不大；隨著襯底溫度的升高，薄膜的結(jié)晶性能得到改善，薄膜的可見光透過率增強(qiáng)，電阻率降低。
關(guān)鍵字: ZnO:Al薄膜；磁控濺射；Zn靶功率；襯底溫度；光電性能
Zn target and Al-doped ZnO target
（School of Metallurgical Science and Engineering, Central South University, Changsha 410083, China）
Abstract:The Al-doped ZnO (AZO) transparent conductive thin films were deposited on glass substrates by co-sputtering with Zn target and ZnO ceramic target. The effects of sputtering power (0−90 W) of Zn target and substrate temperature on structure, surface, optical and electrical properties were investigated. The results indicate that all ZnO:Al thin films obtained by co-sputtering show hexagonal structure. And with the increase of Zn target sputtering power, the film crystallization quality is improved earlier and then deteriorated gradually, the carrier concentration also increases, and the resistivity of films lower accordingly. But the effect is not obvious for Zn target power on optical properties of films. While with the rise of substrate temperature, the crystallization of thin films is improved, the optical transmittance is enhanced and the resistivity is reduced.
Key words: ZnO:Al thin films; magnetron sputtering; power on Zn target; substrate temperature; optical and electrical properties
