(北京工業(yè)大學(xué) 材料科學(xué)與工程學(xué)院，北京 100124)
摘 要: 采用射頻磁控濺射方法，在石英襯底上制備Mg摻雜的CuCrO2 薄膜。通過XRD、紫外吸收光譜及電學(xué)性能的測量表征該系列薄膜樣品的結(jié)構(gòu)與光電性能。結(jié)果表明：退火處理后所有薄膜樣品的結(jié)晶性良好，均為3R型銅鐵礦結(jié)構(gòu)；薄膜的電導(dǎo)率隨摻雜量的增加而增大。當(dāng)x=0.09時，樣品的室溫電導(dǎo)率可達(dá)6.16×10−2 S/cm，比未摻雜的CuCrO2提高近400倍，且霍耳測試表明所制備的薄膜為p型導(dǎo)電體。電導(dǎo)率隨溫度變化關(guān)系表明：薄膜樣品在200~300 K的溫度范圍內(nèi)均很好地符合Arrhenius熱激活規(guī)律；當(dāng)x=0.09時，最低激活能僅為0.034 eV。薄膜的可見光透過率與光學(xué)帶隙寬度均隨摻雜量的增加而減小。
關(guān)鍵字: CuCrO2薄膜；CuCr1−xMgxO2薄膜；光學(xué)性能；光學(xué)帶隙；室溫電導(dǎo)率；激活能
CuCr1−xMgxO2 (0≤x≤0.09) thin films
（College of Materials Science and Engineering, Beijing University of Technology, Beijing 100124, China）
Abstract:A series of CuCr1−xMgxO2 (0≤x≤0.09) thin films were deposited on quartz substrates using radio frequency magnetron sputtering. The structures, optical and electrical properties of CuCr0.91Mg0.09O2 thin films were investigated by diffractometry, double-beam spectrophotometry, electrical property measurement, respectively. XRD pattern indicates that all films are of 3R polycrystalline delafossite phase with good crystallinity after annealing. The conductivity of film has a notable improvement with increasing Mg. The conductivity at room temperature is 6.16×10−2 S/cm for x=0.09 which is nearly 400 times higher than that undoped CuCrO2 film. The p-type nature of films is confirmed by Hall measurements. The temperature dependence of electrical conductivity agrees well with the Arrhenius rule in the range of 200−300 K for all samples, and the minimum activation energy is 0.034 eV with x=0.09. Both average transmittance and optical band gap of CuCr1−xMgxO2 films decrease with the increase of Mg concentration.
Key words: CuCrO2 film; CuCr1−xMgxO2 films; optical property; optical band gap; room temperature conductivity; activation energy
