Transactions of Nonferrous Metals Society of China The Chinese Journal of Nonferrous Metals

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中國(guó)有色金屬學(xué)報(bào)

ZHONGGUO YOUSEJINSHU XUEBAO

第20卷    第1期    總第130期    2010年1月

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文章編號(hào):1004-0609(2010)01-0163-07
包覆結(jié)構(gòu)CeO2/SiO2復(fù)合磨料的合成及其應(yīng)用
陳  楊1, 2,隆仁偉1,陳志剛1

(1. 江蘇工業(yè)學(xué)院 材料科學(xué)與工程學(xué)院,常州 213164;
2. 常州市高分子新材料重點(diǎn)實(shí)驗(yàn)室,常州 213164
)

摘 要: 以正硅酸乙酯水解所得的SiO2微球?yàn)閮?nèi)核,采用均勻沉淀法制備具有草莓狀包覆結(jié)構(gòu)的CeO2/SiO2復(fù)合粉體。利用X射線衍射儀、透射電子顯微鏡、X射線光電子能譜儀(XPS)、動(dòng)態(tài)光散射儀和Zeta電位測(cè)定儀等手段,對(duì)所制備樣品的物相結(jié)構(gòu)、組成、形貌和粒徑大小進(jìn)行表征。將所制備的包覆結(jié)構(gòu)CeO2/SiO2復(fù)合粉體用于硅晶片熱氧化層的化學(xué)機(jī)械拋光,用原子力顯微鏡(AFM)觀察拋光表面的微觀形貌,測(cè)量表面粗糙度,并測(cè)量材料去除率。結(jié)果表明:所制備的CeO2/SiO2復(fù)合顆粒呈規(guī)則球形,平均粒徑為150~200 nm,CeO2納米顆粒在SiO2內(nèi)核表面包覆均勻。CeO2顆粒的包覆顯著地改變復(fù)合顆粒表面的電動(dòng)力學(xué)行為,CeO2/SiO2復(fù)合顆粒的等電點(diǎn)為6.2,且明顯地偏向純CeO2;CeO2外殼與SiO2內(nèi)核之間形成Si—O—Ce鍵,兩者產(chǎn)生化學(xué)鍵結(jié)合;拋光后的硅熱氧化層表面在2 μm×2 μm范圍內(nèi)粗糙度為0.281 nm,材料去除率達(dá)到454. 6 nm/min。

 

關(guān)鍵字: CeO2/SiO2復(fù)合磨料;包覆;化學(xué)機(jī)械拋光

Synthesis and application of CeO2-coated SiO2 composite abrasives
CHEN Yang1, 2, LONG Ren-wei1, CHEN Zhi-gang1

1. School of Materials Science and Engineering, Jiangsu Polytechnic University, Changzhou 213164, China;
2. Key Laboratory of Polymer Materials, Changzhou 213164, China

Abstract:The SiO2 nanoparticles prepared by the hydrolyzing tetraethylorthosilicate were directly coated with CeO2 by chemical precipitation technique. The as-prepared samples were analyzed with X-ray diffractometry(XRD), transmission electron microscope, X-ray photoelectron spectrometer, dynamic light scatter and Zeta potential analyzer. The thermal oxide film covered silicon wafer was polished by CeO2-coated SiO2 composite abrasives, and the polishing behavior of the novel composite abrasives was characterized by atomic force microscope (AFM). The results indicate that the monodisperse, spherical CeO2-coated SiO2 particles have a particle size of 150−200 nm and are uniformly coated by the CeO2 nanoparticles. The isoelectric point of CeO2-coated SiO2 nanoparticles is about 6.2, which displays a significant shift toward pure CeO2. The shell CeO2 is chemically bounded with SiO2 core, and the Si—O—Ce bond forms between them. The surface roughness within 2 μm×2 μm area of thermal oxide film polished by CeO2-coated SiO2 composite abrasives is 0.281 nm, and the material removal rate reaches 454.6 nm/min.

 

Key words: CeO2-coated SiO2 composite abrasives; coating; chemical mechanical polishing

ISSN 1004-0609
CN 43-1238/TG
CODEN: ZYJXFK

ISSN 1003-6326
CN 43-1239/TG
CODEN: TNMCEW

主管:中國(guó)科學(xué)技術(shù)協(xié)會(huì) 主辦:中國(guó)有色金屬學(xué)會(huì) 承辦:中南大學(xué)
湘ICP備09001153號(hào) 版權(quán)所有:《中國(guó)有色金屬學(xué)報(bào)》編輯部
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