(1.廣州有色金屬研究院新材料室，廣州510651；
2.清華大學(xué)材料科學(xué)與工程系，北京100084)
摘 要: 用離子束增強(qiáng)沉積方法制備了Si-N薄膜，其中Si由一束Ar離子從Si靶上濺射下來，在濺射沉積的同時(shí)，以一束N離子轟擊正在沉積的膜層，于是獲得了Si-N膜。采用盧瑟福背散射、紅外光譜和透射電鏡對(duì)膜層的成分和結(jié)構(gòu)進(jìn)行了分析，結(jié)果表明：膜面平整，膜層為非晶或微晶結(jié)構(gòu)，由Si和β-Si3N4組成。
關(guān)鍵字: 離子束增強(qiáng)沉積 Si-N膜
OF Si-N THIN FILMS
（1.Guangzhou Research Institute ofNonferrous Metals, Guangzhou 510651）
Abstract:Ion beam enhanced deposition of Si-N thin films was studied. Si-N thin films were formed by simultaneous bombardment of nitrogen ion beam during sputter deposition of silicon by an argon ion beam. The composition and the structure of the films were analyzed by means of RBS, IR and TEM. The smooth films with microcrystalline or amorphous structure consisted of Si and stoichiometricβ-Si3N4.
Key words: ion beam enhanced deposition (IBED) Si-N thin films nitrogen ion beam
