(1.北京有色金屬研究總院，北京 100088;
2.中國科學院北京電子顯微鏡實驗室， 北京 100080;
3.中國科學院半導體研究所， 北京 100083)
摘 要: 采用高壓電子顯微鏡(HVEM)的原位觀察技術(shù)，在1 MV加速電壓和室溫至650 ℃加熱條件下，觀察了氫離子注入硅片中缺陷層的變化。在500℃以下，氫離子注入缺陷層基本沒有變化，在650 ℃保溫時， 缺陷的密度逐漸降低， 樣品中薄區(qū)域部分的缺陷在保溫20 min后消失， 而厚區(qū)域部分在保溫40 min后仍存有部分缺陷，說明缺陷的變化與樣品厚度有關(guān)。用氫的擴散理論討論了這一現(xiàn)象，提出氫可能是以H2分子的形式擴散的。
關(guān)鍵字: 硅 高壓電子顯微鏡 離子注入 氫 擴散
（1.General Research Institute for Nonferrous Metals, Beijing 100088, P. R. China;
2.Beijing Laboratory of Electron Microscopy,Chinese Academy of Sciences, Beijing 100080, P. R. China;
3.Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China;）
Abstract:In situ observation of microstructural defects in hydrogen implanted silicon annealed from room temperature to 650 ℃ has been carried out in a high voltage electron microscope operating at
1 MV. When the temeprature is below 500 ℃, no obvious change takes place in the defect layer caused by H+ ion implantation. The density of defect decreases gradually when the temperature rises to 650 ℃. Defects in thin region of the sample disappear after annealing at 650 ℃ for 20 min, while some defects still exist in thick region of the sample after annealing for 40min . This indicates that the evolution of defects depends on the thickness of the sample, which can be interpreted by the diffusion of hydrogen. It is proposed that diffusion occurs possibly through a hydrogen molecule form.
Key words: silicon high voltage electron microscope ion implantation hydrogen
diffusion
