(中南工業(yè)大學(xué)材料科學(xué)與工程系， 長沙 410083)
摘 要: 采用粉末冶金方法，制備了用于電力電子半導(dǎo)體支撐板的一種新型的FeNi/Cu復(fù)合材料(簡稱DG合金)， 詳細(xì)研究了DG合金，電阻性能的各種影響因素——銅含量、 燒結(jié)溫度、 FeNi粉和銅粉的粒度、 Cu纖維的長徑比。實(shí)驗(yàn)結(jié)果表明：DG合金的電阻率不僅與銅含量有關(guān)，還與FeNi與Cu相的界面擴(kuò)散、 分布形態(tài)、結(jié)合強(qiáng)度有關(guān)。
關(guān)鍵字: 關(guān)鍵詞: DG合金 復(fù)合材料 電阻性能 擴(kuò)散
（Department of Materials Science and Engineering,Central South University of Technology, Changsha 410083, P. R. China）
Abstract:DG alloy, which is a new kind of composites composed of FeNi and Cu and used for power semiconductor support materials, was made by powder metallurgy. Many factors affecting DG alloy electrical resistivity including Cu content, sintering temperature, the particle size of FeNi powder and Cu powder, the ratio of length to radius of Cu fiber, were studied. The experimental results showed that the change of electrical resistivity of DG composites is mainly relevant to the distribution and the diffusion of FeNi phase and Cu phase as well as Cu content.
Key words: DG alloy composites electrical property diffusion
