(中南工業(yè)大學(xué)應(yīng)用物理與熱能工程系，長沙 410083;
北京有色金屬研究總院， 北京 100088;
浙江大學(xué)硅材料國家重點實驗室， 杭州 310027)
摘 要: 為減小硅片高溫工藝中的形變， 通過仿硅器件在1200℃熱處理1.5h 高溫工藝熱處理實驗， 研究了裝片方式、 升溫速率和急冷溫度等工藝條件對硅片彎曲度變化的影響， 實驗結(jié)果表明硅片熱處理中塑性形變主要是在急冷過程產(chǎn)生的，快速加熱對形變影響不大。 急冷溫度越高，硅片中心與邊緣溫差越大，因產(chǎn)生位錯和滑移形成的塑性形變就越大， 1200 ℃急冷的彎曲度變化是770℃急冷的4倍，水平裝片比豎直裝片形變大，緊貼式裝片比間隔式容易彎曲。 采用降低急冷溫 度，由1200℃緩慢降至770 ,℃左右再急冷， 配合豎直間隔方式裝片和容器加蓋等方法可減少高溫工藝中硅片的形變。
關(guān)鍵字: 硅片 高溫工藝 塑性形變
（Department of Applied physics and Heat Engineering, Central South University of Technology, Changsha 410083, P. R. China
Beijing General Research Institute for Non-ferrous Metals, Beijing 100088, P. R. China
State Key Laboratory of Si Materials, Zhejiang University, Hangzhou 310027, P. R. China）
Abstract:The effects of elevated temperature process parameters, fashion of placing wafer, elevating temperature rate and fast cooling temperature on the change of bow of silicon wafer were studied by 1200 ℃ for 1. 5 h heat treatment of silicon wafer for decreasing plastic deformation of silicon wafer during high temperature process. The results showed that the fast cooling caused the plastic deformation, and the fast heating did not affect the deformation; the higher the fast cooling temperature and the larger the difference of temperature between the centre and the edge of a silicon wafer, the larger the plastic deformation caused by the dislocation and its slip. The change of bow of silicon wafer cooled at 1200 ℃ was 4 times that at 770 ℃. Decreasing the fast cooling temperature, covering the vessal and placing the wafers perpendicularly with gap decreased the deformation of the silicon wafer.
Key words: silicon wafer elevated temperature process plastic deformation
