(中南工業(yè)大學(xué)材料科學(xué)與工程系，長沙 410083)
摘 要: 分析了傳統(tǒng)熔滲法生產(chǎn)的W-Cu材料氣密性差的工藝因素，采用加入一定數(shù)量的誘導(dǎo)銅的工藝方法進(jìn)行壓型，通過調(diào)整成型壓力，使生坯中的W含量達(dá)到電子封裝W-Cu15含鎢量的標(biāo)準(zhǔn)，其余的Cu在熔滲時滲入。實(shí)驗(yàn)表明，加入1%～2 .5%的誘導(dǎo)銅的生坯在1350℃熔滲1.5h，其氣密性可以達(dá)到滿意的效果
關(guān)鍵字: W-Cu合金 電子封裝材料 氣密性 誘導(dǎo)銅
（Department of Materials Science and Engineering,
Central South University of Technology，Changsha 410083, P. R. China）
Abstract:The factors resulting in inferior hermeticity of W-Cu composites made by conventional process were analyzed and then a new process was introduced. Firstly, a small amount of inducing copper powder was mixed with the W powder. Then the mixed powder was directly pressed into green compacts of required density. Finally the balance of the copper was added by infiltrati ng method. It is indicated that when the compact contains 1%～2.5%(mass fraction ) inducing copper and is infiltrated at 1 350℃ for 1.5h, the hermeticity of the material is fairly satisfactory.
Key words: W-Cu composite hermeticity inducing copper infiltration
