Transactions of Nonferrous Metals Society of China The Chinese Journal of Nonferrous Metals

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中國有色金屬學(xué)報(bào)

ZHONGGUO YOUSEJINSHU XUEBAO

第19卷    第9期    總第126期    2009年9月

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文章編號(hào):1004-0609(2009)09-1706-06
聯(lián)氨濃度對(duì)化學(xué)溶池沉積ZnS薄膜的影響
劉庭芝1,多樹旺1,張  萌2,向軍淮1,張榮發(fā)1,胡長員1,朱世峰1

(1. 江西科技師范學(xué)院 江西省材料表面工程重點(diǎn)實(shí)驗(yàn)室,南昌 330038;
2. 南昌大學(xué) 材料科學(xué)與工程學(xué)院,南昌 330031
)

摘 要: 采用化學(xué)溶池沉積法在玻璃襯底上制備ZnS薄膜。為了解聯(lián)氨在沉積過程中的作用,采用金相顯微鏡、XRD、nkd-薄膜分析系統(tǒng)對(duì)薄膜形貌、結(jié)構(gòu)和光學(xué)性能進(jìn)行分析。結(jié)果表明:隨著聯(lián)氨濃度的增加,襯底表面形核點(diǎn)數(shù)目增加,分布均勻,薄膜顆粒得到細(xì)化。結(jié)合Zn2+的絡(luò)合前驅(qū)體、絡(luò)合常數(shù)及其三元絡(luò)合常數(shù)計(jì)算、氫鍵及空間位阻等方面的分析,認(rèn)為會(huì)出現(xiàn)3種不同的絡(luò)合前驅(qū)離子,分別為 、 、 。這些Zn2+的前驅(qū)體影響著襯底形核點(diǎn)的數(shù)目、分布與薄膜的均勻性。在適當(dāng)條件下,聯(lián)氨不再起輔助沉積的作用,而是與氨一起形成三元絡(luò)合配位體系,共同參與沉積。通過改變聯(lián)氨濃度,可以制備出在550~ 1 000 nm的波長范圍內(nèi)透過率達(dá)95%以上、反射率與透過率相對(duì)應(yīng)、均勻平整的非晶薄膜。

 

關(guān)鍵字: ZnS薄膜;化學(xué)水浴;聯(lián)氨濃度;絡(luò)合前驅(qū)體

Effect of N2H4 concentration on ZnS thin film prepared by
chemical bath deposition
LIU Ting-zhi1, DUO Shu-wang1, ZHANG Meng2, XIANG Jun-huai1, ZHANG Rong-fa1,
HU Chang-yuan1, ZHU Shi-feng1

1. Jiangxi Key Laboratory of Surface Engineering, Jiangxi Science and Technology Normal University,
 Nanchang 330038, China;
2. School of Materials Science and Engineering, Nanchang University, Nanchang 330031, China

Abstract:ZnS thin films were deposited on glass substrates by chemical bath deposition (CBD) method. The morphological, structural and optical properties of ZnS thin films were investigated by optical microscope, XRD and nkd- spectrophotometer. The results show that with N2H4 concentration increasing, the number of active points on the surface of substrate is improved and the grain size of thin films becomes smaller. At the same time, the uniformity of active points of surface is improved. Combining the analysis of complex precursor of Zn2+, the stability constant of ternary complex and its calculation, hydrogen bond with steric crowding of complex, there are three major precursors, such as ,  and , which influence the number, distribution of active points and the uniformity of thin films with increasing N2H4 concentration. The appearance of  means that hydrazine is not also a usual complementary agent, it becomes a complex precursor of Zn2+ with amine. By changing the concentrations of N2H4, the uniform, smooth and un-crystal ZnS thin films, whose reflectivity is larger than 95% at the wavelength ranging from 550 nm to 1 000 nm and the reflectivity spectra correspond well with their transmission spectra, can be obtained.

 

Key words: ZnS thin film; chemical bath deposition; N2H4 concentration; complex precursor

ISSN 1004-0609
CN 43-1238/TG
CODEN: ZYJXFK

ISSN 1003-6326
CN 43-1239/TG
CODEN: TNMCEW

主管:中國科學(xué)技術(shù)協(xié)會(huì) 主辦:中國有色金屬學(xué)會(huì) 承辦:中南大學(xué)
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