姚劉聰2， 李玉濤2， 蘇小保2
(1. 中國科學(xué)院 上海微系統(tǒng)與信息技術(shù)研究所離子束重點(diǎn)實(shí)驗(yàn)室，
上海 200050；
2. 中國科學(xué)院 電子學(xué)研究所， 北京 100080)
摘 要: 采用離子束輔助沉積方法(IBAD)在Si(111)襯底上沉積了鉿薄膜。 實(shí)驗(yàn)發(fā)現(xiàn)： 在鉿膜生長時(shí)， 轟擊鉿膜的Ar↑+離子的能量、 入射角度和束流密度對(duì)薄膜的晶粒取向有很大的影響。 當(dāng)Ar↑+離子的能量為500eV、 入射角為75°、 束流密度為0.9A/m2時(shí)， 鉿膜為(110)擇優(yōu)取向。 當(dāng)束流密度大于1.2A/m2時(shí)， 鉿膜以(002)、 (100)混合晶向?yàn)橹鳎?而與Ar↑+離子的入射角度無關(guān)。 討論了鉿膜晶粒取向的轉(zhuǎn)變機(jī)制， 認(rèn)為鉿膜晶粒的擇優(yōu)取向，不是單純地取決于基于溝道效應(yīng)的濺射機(jī)制， 或取決于基于能量極小原理的表面能最小或表面應(yīng)力最小的面生長較快的機(jī)制， 而是影響薄膜生長的各種因素互相競(jìng)爭(zhēng)、 共同作用，在非平衡態(tài)條件下表面能極小化的結(jié)果。
關(guān)鍵字: 離子束輔助沉積；鉿膜； 擇優(yōu)取向
ion beam assisted depostion
LIU Xiang-huai1, FAN Hui-ming2, YAO Liu-cong2,
LI Yu-tao2
（1. Ion Beam Laboratory, Shanghai Institute of Microsystem and Information Technology,
Chinese Academy of Sciences, Shanghai 200050, China；
2. Institute of Electronics, Chinese Academy of Sciences, Beijng 100080, China）
Abstract:Hf films were synthesized by ion beam assisted deposition(IBAD). The influence of ion bombardment during deposition on the preferred orientation of films was studied. Hf film grains exhibit preferred (110) orientation when the growing film is bombarded by 500eV Ar+ ions at an incident angle of 75° and a current density of 0.9A/m2. When the current density is beyond 1.2A/m2, the Hf films exhibit mixed (002) and (100) orientation and which is not concerned with the ion incident angle. The reason for the preferred orientation of Hf film was discussed. It is considered that the preferred orientation of Hf films does not simply depend on the channeling effects of ions, or the grain surface energy, but it is the result of mutual competition and actions of several factors, which influences the crystallographic orientation of thin films in the non-equilibrium growth conditions.
Key words: ion beam assisted deposition(IBAD); Hf film; preferred orientation
