(中南大學(xué) 材料科學(xué)與工程學(xué)院， 長沙 410083)
摘 要: 采用顯微硬度測量、 取向分布函數(shù)（ODF）分析及顯微組織觀察， 研究了在不同退火溫度以及摻硅與未摻硅條件下鉭絲的再結(jié)晶行為。 研究發(fā)現(xiàn)： 在1360℃退火時摻硅對鉭絲的再結(jié)晶有阻礙作用， 晶粒變細， 絲織構(gòu)主要由{110}〈001〉組成； 當(dāng)退火溫度升高至1500℃時， {120}〈001〉再結(jié)晶織構(gòu)消失， 在未摻硅鉭絲中發(fā)現(xiàn)了新的{441}〈110〉織構(gòu)組分， 與初次再結(jié)晶織構(gòu)組分{120}〈001〉之間存在一個近似于84°〈110〉的轉(zhuǎn)動關(guān)系， 此時， 摻入硅元素反而促進了再結(jié)晶的發(fā)展， 晶粒變得粗大且不均勻。 這種現(xiàn)象可以用硅化物的形成與溶解來解釋。
關(guān)鍵字: 鉭絲； 摻硅； 再結(jié)晶； 織構(gòu)
（School of Materials Science and Engineering,
Central South University, Changsha 410083, China）
Abstract:The recrystallization textures of the tantalum wires with silicon additives(0.01%) after annealed at different temperatures were investigated by ODF, and the recrystallization mechanism was studied by microstructures and hardness measurement. It is found that the recrystallization temperature increases with silicon additives after annealed below 1360℃ and the main texture component consists of {110}〈001〉, but at 1500℃, the exaggerated growth occurs. The size of recrystallized grains grows larger and a new component {441}〈110〉 having an 84°〈110〉 orientation relationship to the primary texture {120}〈001〉 is found. The reason for the exaggeration may be the dissolution of dislocation-silicon atom pairs.
Key words: tantalum wires; silicon additives; recrystallization; texture
