(1.北京有色金屬研究總院， 北京 100088；
2.北京工業(yè)大學(xué) 材料科學(xué)與工程學(xué)院，北京 100022；
3.中南大學(xué) 材料科學(xué)與工程系， 長沙 410083)
摘 要: 根據(jù)氫氧化鎳電極材料的X射線衍射譜線的各向異性寬化特性，提出層錯結(jié)構(gòu)表征方法。采用層錯寬化效應(yīng)的Warren法和Langford譜分解法，測算了一些鎳電極材料的層錯率。結(jié)果發(fā)現(xiàn)層錯率與材料的放電容量存在對應(yīng)關(guān)系，放電容量較高(270mA·h/g)的材料層錯率達(dá)14.9%，而放電容量較低(207mA·h/g)的材料層錯率為7.6%。因此可以用層錯率表征氫氧化鎳電極材料的電化學(xué)性能。
關(guān)鍵字: 氫氧化鎳；電極材料；層錯率；放電容量
stacking faults for nickel hydroxide
（1.General Research Institute for Nonferrous Metals,
Beijing 100088, China;
2.School of Materials Science and Engineering,
Beijing Polytechnic University, Beijing 100022, China;
3.Department of Materials Science and Engineering,
Central South University, Changsha 410083, China）
Abstract:According to the anisotropic broadening feature in X-ray diffraction pattern of Ni(OH)2 electrode materials, the stacking fault structural model is proposed. By using the methods suggested from both of Warren and Langford, the stacking fault probability of so me nickel hydroxides were determined. Compared with the data of discharge capacity of the material, it is found that there exists a certainly corresponding relationship, e.g. the greater the discharge capacity (270mA·h/g), the higher the stacking fault probability (14.9%) is an d the smaller the discharge capacity (207mA·h/g), the lower the stacking fault probability (7.6%) is. The structural characterization of electrochemical property was suggested by using stacking fault ratio.
Key words: nickel hydroxide; electrode material; stacking fault; discharge capacity
