(中南大學 應用物理與熱能工程系，長沙 410083)
摘 要: 在不同條件下用射頻濺射方法制備了氮化碳薄膜。薄膜的電子結構和元素成分用傅里葉變換紅外光譜(FTIR)和光電子能譜(XPS)進行分析，薄膜的光學性質用紫外-可見-近紅外光譜(UV)進行檢測。薄膜中的最大氮原子含量達到0.47，C1s和N1s電子的結合能產生了＋2.41～-1.7eV的移動，移動的大小取決于制備條件。UV譜表明氮化碳薄膜能強烈地吸收紫外光，而對紅外光有較好的透明性，在2720nm附近存在一明銳的吸收峰，并給出了形成這一明銳吸收峰的適宜條件。這些結果對作為保護光學涂層的紅外應用是有意義的。
關鍵字: 氮化碳薄膜；光學性質；射頻濺射；電子結構
nitride thin films prepared by
radio frequency sputtering
（Department of Applied Physics and Heat Energy Engineering,
Central South University,Changsha 410083, China）
Abstract:Carbon nitride thin films are deposited under different conditions of radio frequency sputtering. An analysis of their electron structure and elemental composition is done with the help of Fourier transform infrared (FTIR) spectroscopy and X-ray photoelectron spectroscopy(XPS). By using ultraviolet-visible-near infrared (UV) spectroscopy，their optical properties are shown clearly. The maximum Natom content in the films reaches 0.47 and the binding energy (BE) of C1s and N1s photoelectron varies with deposition conditions, shifting between 2.41 and -1.7eV. UV spectra show that the films have pronounced optical absorption in ultraviolet region and good transparency in near infrared region, with a sharp absorption peak around 2720nm. The optimum condition, which causes the sharp absorption peak, is specified and these results is considered useful for infrared application as aprotective optical coating.
Key words: carbon nitride thin film; optical property; sputtering; electron structure
