(1.上海電力學(xué)院 電化學(xué)研究室，國(guó)家電力公司熱力設(shè)備腐蝕與防護(hù)重點(diǎn)實(shí)驗(yàn)室，上海 200090；
2. 華東理工大學(xué) 防腐蝕中心， 上海 200237)
摘 要: 采用光電化學(xué)方法和交流阻抗方法對(duì)不同濃度的B TA(苯并三氮唑)和5CBTA(5-羧基苯并三氮唑)在硼砂緩沖溶液(pH 9.2)中對(duì)銅電極的緩蝕性能作了比較研究。研究發(fā)現(xiàn)兩者對(duì)銅的緩蝕作用機(jī)理不同。一定濃度的BTA能使電極表面Cu2O膜的結(jié)構(gòu)改變，在電位正向掃描過程中銅電極光響應(yīng)由p型轉(zhuǎn)化為n型，并可依此判斷緩蝕劑的緩蝕性能，n型光響應(yīng)越大，緩蝕劑的緩蝕性能越好；而5CBTA能使電極表面的Cu2O膜增多，在電 位負(fù)向掃描過程中陰極光電流密度明顯增大，并可據(jù)此判斷緩蝕劑的緩蝕性能， 陰極光電流密度愈大，緩蝕效果越好。同時(shí)這兩種緩蝕劑均可用φV 和某一較負(fù)電位下的陰極光電流密度Jph的大小來判 斷緩蝕劑的緩蝕性能，φV和Jph越負(fù)，緩蝕性能越好。交流阻抗方法 的結(jié)果和光電化學(xué)的結(jié)果相一致。
關(guān)鍵字: 苯并三氮唑； 5-羧基苯并三氮唑； 銅電極； 光 電化學(xué)； 交流阻抗
inhibiting action of BTA and 5CBTA on copper
（1. Electrochemistry Research Center，Shanghai Institute of Electric Power ，
Shanghai 200090， P.R.China：
2. Corrosion Prevention Center，East China University of Science and Technolo gy，
Shanghai 200237， P.R.China）
Abstract: The photoelectrochemistry behaviour of coppere lectrode in buffer bor ax solutions (pH 9.2) containing BTA and 5CBTA was comparatively studied by using photoelectrochemistry technique. The inhibition mechanisms of BTA and 5CBTA for copper corrosion are different. The photoresponse for copper electrode in soluti on containing a certain amount of BTA exhibits n type during anodic polarization ， the bigger then-ype photoresponse，the better the inhibition of the inhib itor; the photoresponse for copper electrode in solutions containing 5CBTA alwayse xhibitsp-type during anodic polarization，but the photoresponse changes evide nt ly during cathodic polarization，the bigger the maximum cathodic photocurrent，the better the inhibition of the the inhibitor. Inhibitors can be evaluated by φV and Jph at a more negative potential，the more negative the φV and Jph，the better the inhibition. The results from photoelectroche mical technique are in agreement with those from AC impedance technique.
Key words: BTA； 5CBTA； copper electrode； photoelect rochemistry； AC impedance
