(1. 福州大學(xué) 材料學(xué)院， 福州 350002;
2. 福州大學(xué) 電子系， 福州 350002)
摘 要: 利用透射電鏡原位觀察了單晶硅壓痕裂紋尖端位錯及位錯偶沿滑移面的發(fā)射行為。考察了滑移面取向、外荷對發(fā)射位錯及塑性區(qū)的影響。結(jié)果表明：在I型載荷作用下，滑移面與裂紋面夾角要影響從裂紋尖端發(fā)射的位錯數(shù)量及塑性區(qū)。發(fā)射出的位錯可沿最大切應(yīng)力方向改變運動方向或交換滑移面運動。實驗觀察的位錯寬度平均值為22.0nm，與Peierls位錯框架模型計算的23.6nm相近。
關(guān)鍵字: 位錯發(fā)射； TEM觀察； 塑性區(qū)
from crack tips in single silicon
（1. College of Materials, Fuzhou University,
Fuzhou 350002, P.R.China;
2. Department of Electron, Fuzhou University,
Fuzhou 350002, P.R.China）
Abstract: Dislocation emissions on the slip plane from crack tips in silicon were observed through transmission electron microscopy. The effects of the slip plane orientation and load on dislocation emission or plastic zone have been investigated. The results show that the angle between slip plane and crack plane has an effect on dislocation structure and plastic zone under the I mode load, and the direction of the movement of dislocation emission may change along the direction of the maximum shear stress, or move in zigzag on different slip planes alternatively. The experimental average 22.0nm of dislocation width approximates to 23.6nm calculated by Peierls dislocation model.
Key words: dislocation emission； behavior； plastic zone
