(1.中國(guó)科學(xué)院 上海冶金研究所，上海 200007;
2. 浙江大學(xué) 信息科學(xué)與電子工程系，杭州 310027)
摘 要: 采用磁控濺射與真空蒸發(fā)工藝相對(duì)比的方法，分析了不同金屬化薄膜及其結(jié)構(gòu)對(duì)薄膜與PZT陶瓷的結(jié)合力和器件高頻電學(xué)性能的影響。實(shí)驗(yàn)表明：Cu-Ni+Ag薄膜可以改善陶瓷與金屬的結(jié)合和減少反浸潤(rùn)發(fā)生，顯著提高結(jié)合力，從而改善器件的電學(xué)性能。分析表明結(jié)合力是影響高頻壓電陶瓷電學(xué)性能的一個(gè)重要因素，實(shí)驗(yàn)得到了優(yōu)化的金屬化薄膜成分和結(jié)構(gòu)，同時(shí)提出了相應(yīng)的濺射工藝。
關(guān)鍵字: PZT；表面金屬化；濺射
high-frequency PZT ceramic and
its structure
WANG Hua2
（1. Shanghai Metallurgy Institute, Chinese Academy of Science,
Shanghai 200007, China;
2. Department of Information and Electronics,
Zhejiang University，Hangzhou 310027, China）
Abstract:By comparing sputtering method with vaporization， varied structure of metallization thin films was studied. The result shows that the structure of metallization thin films like as Cu-Ni+Ag can greatly promote adhesion between PZT ceramic and metal，decrease anti-soakage between solder and metal，then improve dev ice performance. The adhesion between Cu-Ni thin film and ceramic has main influence on total adhesion and performance of device. The optimized structure was obtained. At the same time according sputter technology was also got.
Key words: PZT；surface metallization; sputtering
