(1. 西安交通大學(xué) 金屬材料強(qiáng)度國家重點(diǎn)實(shí)驗室,
西安 710049;
2. 西安理工大學(xué) 材料科學(xué)與工程學(xué)院, 西安 710048)
摘 要: 用拓?fù)潢P(guān)系將硅/碳化硅材料轉(zhuǎn)化為具有3個不同顯微結(jié)構(gòu)單元的整體，建立了等效電路，結(jié)合相關(guān)試驗，計算了不同顯微組織的硅/碳化硅材料的電阻率。得到的理論計算結(jié)果與實(shí)驗值的綜合相對誤差僅為3.9%，分析比較了各相含量和分布形態(tài)對硅/碳化硅材料 整體電阻率的影響。結(jié)果表明，提高低電阻率硅的體積含量和其分布連續(xù)性， 可降低材料的整體電阻率。該方法可用來預(yù)測要得到所需電阻率材料中應(yīng)具有的硅含量和分布形態(tài)，為確定制備材料的顯微結(jié)構(gòu)設(shè)計提供指導(dǎo)。
關(guān)鍵字: 硅/碳化硅；拓?fù)浞ǎ浑娮杪?/span>
new silicon/silicon carbide material by
topological method
（1. State Key Laboratory for Mechanical Behavior of Materials,
Xi′an Jiaotong University, Xi′an 710049, China;
2. School of Materials Science and Engineering,
Xi′an University of Technology, Xi′an 710048, China）
Abstract:The electrical resistivity of silicon/silicon carbide materials containing different microstructures was calculated by topological method. The theory result and the experiment value were in very good agreement, and the integrated relative error of them was only 3.9%. The effect of each phase volume fractions and distribution on the bulk material's electrical resistivity was analyzed and compared. The result indicated that the electrical resistivity of the bulk material can be reduced by improving the lower electrical resisitivity silicon phase volume fractions and its contiguity. This approach may predict the free silicon volume fractions and microstructures in the wanted electrical resistivity material, and provide the instruction for determining the material microstructures of preparing materials.
Key words: silicon/silicon carbide; topological method; electrical resistivity
