(中南大學 物理科學與技術(shù)學院，長沙 410083)
摘 要: 采用射頻磁控濺射方法，在普通玻璃上制備了具有高度c軸取向的ZnO薄膜，研究了濺射氣壓(0.2~1.5 Pa)對ZnO薄膜的微觀結(jié)構(gòu)和光電性能的影響。AFM、XRD、UV-Vis分光光度計及四探針法研究表明：隨著濺射氣壓的增大，ZnO薄膜沿c軸方向的結(jié)晶質(zhì)量提高，晶粒細化，薄膜表面更加致密，晶粒大小更加均勻；ZnO薄膜在400~900nm范圍內(nèi)的平均透過率均高于85%，其中在0.5~1.5 Pa范圍內(nèi)其透過率高于90%；樣品在高純氮氣氣氛中經(jīng)350 ℃，300 s退火后，電阻率最低達到10−2 Ω∙cm量級。
關(guān)鍵字: 射頻磁控濺射；ZnO薄膜；濺射氣壓；透明導電薄膜
（School of Physics Science and Technology, Central South University, Changsha 410083, China）
Abstract:ZnO thin films were deposited on glass substrate using the reactive radio-frequency (RF) magnetron sputtering method. The influences of pressure on the surface morphology, the electrical and optical properties were studied by AFM, XRD, UV-Vis spectrophoto meter and four-probe method. The experimental results indicate that the crystalline quality of ZnO thin film is improved and the thin film shows higher c-axis orientation with increasing the pressure. The average transparency of ZnO thin films is higher than 85% in the range of 400~900 nm under different pressures, and the average transparency is higher than 90% at the pressure between 0.5~1.5 Pa. After annealing at 350 ℃ for 300 s under N2 ambient, the lowest resistivity is 10−2 Ω·cm.
Key words: radio-frequency magnetron sputtering; ZnO thin film; sputtering pressure; transparent conducting thin film
