彭觀良， 蔣成勇， 周國(guó)清， 鄧佩珍
(中國(guó)科學(xué)院 上海光學(xué)精密機(jī)械研究所， 上海 201800)
摘 要: InN和GaN是寬禁帶半導(dǎo)體中最重要的光電子材料，但現(xiàn)在還存在一些技術(shù)上的困難阻礙了它們的研究進(jìn)展， 其中一個(gè)重要的問(wèn)題就是缺少合適的襯底材料。 雖然現(xiàn)在對(duì)襯底材料的要求相對(duì)降低了， 但為了生長(zhǎng)出高質(zhì)量的外延薄膜，選擇合適的襯底材料還是非常必要。 本文針對(duì)目前使用的InN外延襯底材料分別進(jìn)行了討論，評(píng)價(jià)了它們的優(yōu)缺點(diǎn)， 指出目前實(shí)用的InN襯底材料是有限的，應(yīng)用最多的還是藍(lán)寶石襯底和MgAl2O4晶體，且MgAl2O4晶體比藍(lán)寶石晶體更有前景。
關(guān)鍵字: InN； GaN； 寬禁帶半導(dǎo)體； 襯底
XIA Chang-tai,PENG Guang-liang, JIANG Cheng-yong, ZHOU Guo-qing, DENG Pei-zhen
（Shanghai Institute of Optics and Fine Mechanics,
Chinese Academy of Sciences, Shanghai 201800, China）
Abstract:InN and GaN are the most important optoelectronic materials of wide band gap semiconductors now. But there were still some difficulties hinder research progress, and one of which was absence of acceptable substrates to InN film. Although epitaxy technology has developed, suitable substrates materials are still important to selecting fine InN film. The research developments on InN substrates were reviewed, the advantage and shortcoming of those substrates were evaluated. It is found that sapphire and MgAl2O4 crystal are the usual used substrates to InN film now, and MgAl2O4 crystal is better to sapphire.
Key words: InN; GaN; wide band gap semiconductor; substrate
