(1. 合肥工業(yè)大學(xué) 材料科學(xué)與工程學(xué)院，合肥 230009；
2. Department of Chemical and Materials Engineering, University of Alberta, EdmontonT6G 2G6, Canada)
摘 要: 采用掃描電子顯微鏡(SEM)、電子能譜儀(EDS)、X射線衍射儀(XRD)對室溫時(shí)效及125~225 ℃熱處理的電沉積Ag/Sn偶反應(yīng)區(qū)結(jié)構(gòu)及相組成進(jìn)行分析，研究Ag/Sn界面固相反應(yīng)的動(dòng)力學(xué)過程。研究表明：在剛電沉積的Ag/Sn偶中發(fā)生Ag/Sn界面固相反應(yīng)，形成Ag3Sn；在室溫時(shí)效過程中Ag3Sn層生長緩慢，但隨著熱處理溫度的提高(125~200 ℃)，Ag3Sn層生長速率顯著提高；Ag/Sn界面固相反應(yīng)為一擴(kuò)散控制的反應(yīng)過程，反應(yīng)的激活能為70.0 kJ/mol。
關(guān)鍵字: 電沉積；電子封裝材料；界面反應(yīng)；反應(yīng)動(dòng)力學(xué)
（1. School of Materials Science and Engineering, Hefei University of Technology, Hefei 230009, China;
2. Department of Chemical and Materials Engineering, University of Alberta, EdmontonT6G 2G6, Canada）
Abstract: The microstructures and phases of reaction regions of the electroplated Ag/Sn couples were studied by using SEM, EDS and XRD, after the couples were aged at room temperature and annealed at 125−225 ℃ for various times. The interfacial reaction kinetics of the Ag/Sn couples was also investigated. The results show that in the as-deposited Ag/Sn couple, the reaction between Ag and Sn occurs to form a thin Ag3Sn layer distributed at the Ag/Sn interface. The growth of the Ag3Sn layer is much slow when the couple is aged at room temperature, however, dramatically increases with the annealing temperature (125−200 ℃). The interfacial reaction of the Ag/Sn couples follows a diffusion-controlled kinetics with activation energy of 70.0 kJ/mol.
Key words: electroplation; electronic packaging materials; interfacial reaction; reaction kinetics
