顯微結(jié)構(gòu)和性能
( 1. 浙江大學(xué) 材料科學(xué)與工程系, 杭州 310027;
2. 新加坡南洋理工大學(xué) 電氣工程系, 新加坡 639798)
摘 要: 采用低溫常壓化學(xué)氣相沉積(CVD)方法在鋁基底上制備了硅氧化物陶瓷膜層。使用SEM、 XPS、 AFM、 XRD、 HRTEM和UV-VIS等技術(shù)分析了膜層的形貌、 成分和組織結(jié)構(gòu)特征， 測試了膜層的孔隙率、光學(xué)和顯微力學(xué)性能。 結(jié)果表明： 硅氧化物SiOx陶瓷膜層在鋁基表面以氣相反應(yīng)沉積硅氧化物顆粒—顆粒嵌鑲堆垛—融合長大的方式生成， 大部分膜層為非晶態(tài)區(qū)域， 其中包含少量局部有序區(qū)域， SiOx中的硅氧原子比為1∶1.60~1∶1.75， 膜層疏松多孔， 具有很高的紫外-可見光吸收率， 膜層與基底具有很好的結(jié)合性。
關(guān)鍵字: 化學(xué)氣相沉積（CVD）; 鋁基； SiOx膜層; 性能
WO Yin-hua1, WANG You-wen1,
SHEN Fu-chu1, GAN Zheng-hao2
（ 1. Department of Materials Science and Engineering, Zhejiang University,
Hangzhou 310027, China;
2. Department of Electronic Engineering,
Nanyang Technological University,
Singapore 639798, Singapore）
Abstract: A new kind of silicon oxide(SiOx) film was prepared on aluminum substrate by ambient pressure chemical vapor deposition(APCVD). The morphology, composition and microstructure characteristics of the film were tested by SEM, XPS, AFM, XRD, HRTEM and UV-VIS techniques, respectively. The results show that the SiOx film most comprises uncrystalline microstructure with a fraction of dispersed ordered zones. The deposition process can be described as the reaction of SiH4 and O2 for forming SiOx particle and deposition on heated Al substrate, close packing of the SiOx particles and growing into coating layer. The tests also show that the film is loosen and porous, and the atomic ratio of the silicon to oxygen of the SiOx film is 1∶1.60-1∶1.75. The substrate and the film are well-bonded. The visible and ultraviolet light reflection value of the composite film is very low.
Key words: chemical vapor deposition(CVD); SiOx film; aluminum substrate; property
