馬松山2， 簡獻忠3
( 1. 中南大學(xué) 物理科學(xué)與技術(shù)學(xué)院, 長沙 410083;
2. 中南大學(xué) 材料科學(xué)與工程學(xué)院, 長沙 410083;
3. 上海理工大學(xué) 電氣與工程學(xué)院, 上海 200093)
摘 要: 使用CF4和CH4為源氣體， 利用射頻等離子體增強化學(xué)氣相沉積法， 制備了a-C∶F∶H薄膜樣品。 采用拉曼光譜儀、 傅里葉變換紅外光譜儀、 X射線光電子能譜儀(XPS)對薄膜的結(jié)構(gòu)進行了測試和分析。 研究發(fā)現(xiàn)： 該膜呈空間網(wǎng)狀結(jié)構(gòu)，膜內(nèi)碳與氟、 氫的結(jié)合主要以sp3形式存在， 而sp2形式的含量相對較少；在薄膜內(nèi)主要含有C—Fx(x=1, 2, 3)、 C—C、 C—H2、 C—H3等以及不飽和C—C化學(xué)鍵； 同時， 薄膜中C—C—F鍵的含量比C—C—F2鍵的含量要高。 在不同功率下沉積的薄膜， 其化學(xué)鍵結(jié)構(gòu)明顯不同。
關(guān)鍵字: a-C∶F∶H薄膜；等離子體增強化學(xué)氣相沉積； 低介電常數(shù)； 化學(xué)鍵
fluorinated amorphous carbon films
MA Song-shan2, JIAN Xian-zhong3
（ 1. School of Physics Science and Technology,
Central South University, Changsha 410083, China;
2. School of Materials Science and Engineering,
Central South University, Changsha 410083, China;
3. School of Electric and Engineering,
University of Shanghai Science and Technology, Shanghai 200093, China）
Abstract: Fluorinated amorphous hydrogenated carbon (a-C∶F∶H) thin films were deposited by radio frequency plasma enhanced chemical vapor deposition (PECVD) reactor with CF4 and CH4 as source gases, at RF-power of 150 W or 200 W, and 100 ℃. The structure of the films was investigated by Raman spectroscopy, and it is found that the content of the hybrid-bonding configuration of sp3 is more than that of sp2. The component and chemical bands structure of the films were investigated by infrared (IR) absorption and X-ray photoelectron spectroscopy (XPS). The results of IR and XPS analysis suggest that the chemical bonding structures in the films are mainly C—Fx(x=1, 2, 3), C—H2, C—H3, C—C and unsaturated bonding of C—C. The relative content of C—C—F is much more than that of the C—C—F2 in these films. The chemical bonding structures change with different deposition power.
Key words: a-C∶F∶H thin films; plasma enhanced chemical vapor deposition(PECVD); low dielectric constant; chemical bands
