(中南大學(xué) 材料科學(xué)與工程學(xué)院，長沙 410083)
摘 要: 采用溶膠-凝膠(sol-gel)法， 利用自制的提拉實驗設(shè)備于石英玻璃片上制得了ITO(indium tin oxide)透明導(dǎo)電薄膜，并就薄膜的物相結(jié)構(gòu)、 微觀組織、 導(dǎo)電性能及透光性等進行了研究分析。 結(jié)果表明： 薄膜的方電阻和透光性與提拉速度、提拉次數(shù)、 熱處理溫度、 冷卻方式及Sn原子摻雜量等因素有關(guān)。 當(dāng)Sn原子摻雜量為12.5%(質(zhì)量分?jǐn)?shù))、 提拉速度為80 mm/min、 經(jīng)5次提拉且每次提拉后經(jīng)550 °C熱處理(爐外空冷)而最終制得的ITO薄膜的方電阻為110 Ω/， 透光率可達90%以上。 用溶膠-凝膠法制備ITO薄膜具有工藝簡單可控， 成本較低且宜于大面積成膜等優(yōu)點。
關(guān)鍵字: sol-gel法； 提拉； ITO膜； 透明； 導(dǎo)電
（ School of Materials Science and Technology,
Central South University, Changsha 410083, China）
Abstract: The ITO(Indium tin oxide) thin films were prepared by sol-gel method on the quartz glass slices to be clipped by a lab-scale dip-coating equipment. The structure properties and the physical properties (electrical resistance and transmittance) of the films were investigated by XRD, SEM, IR four-probe method and UV-VIS spectrometer. The experimental results indicate the possibility to prepare transparent and conductive ITO films by sol-gel dip-coating technique. The resistance and transmissivity of films is related to the tin atoms volume to be adulterated, dip-coating speed, heat treatment temperature, et al. The resistance of the ITO films is 110 Ω/□ and the transmissivity is above 90% at the visible light area when tin atoms content in the sample is 12.5%(mass fraction), the dip-coating speed is 80 mm/min and the heat treatment temperature is 550 °C in the technique condition. It will be convenient for preparation of large area ITO films by sol-gel dip-coating technology in low cost.
Key words: sol-gel technique; dip-coating; indium tin oxide film; limpidity; conducting electricity
