Transactions of Nonferrous Metals Society of China The Chinese Journal of Nonferrous Metals

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中國有色金屬學(xué)報(bào)

ZHONGGUO YOUSEJINSHU XUEBAO

第16卷    第12期    總第93期    2006年12月

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文章編號:1004-0609(2006)12-2104-05
Ni控制摻雜InVO4薄膜的制備及其可見光催化活性
李新軍1, 樊俊林1,2, 鄭少健1,王建華3

(1. 中國科學(xué)院 廣州能源研究所, 廣州 510640;
2. 中國科學(xué)院 研究生院, 北京 100039;
3. 中船重工集團(tuán)公司 第719研究所, 武漢 430064
)

摘 要:  采用溶膠-凝膠(sol-gel)法制備Ni控制摻雜的InVO4可見光催化劑薄膜。 通過X射線衍射分析、 差熱-熱重分析確定InVO4晶體結(jié)構(gòu)及合成工藝;采用UV-vis分光光度計(jì)測定了薄膜的光吸收特性; 利用電化學(xué)工作站研究了薄膜的光電化學(xué)特性; 并通過亞甲基藍(lán)溶液在可見光照射下的催化降解脫色率來表征薄膜的催化活性。實(shí)驗(yàn)結(jié)果表明: InVO4的晶型轉(zhuǎn)化溫度約為500 ℃; InVO4的光吸收在可見光范圍; 光電流譜顯示Ni底層控制摻雜InVO4的信號明顯增強(qiáng), 催化活性明顯增強(qiáng), 而均勻摻雜的光電流信號減弱, 催化活性降低。 最后從光生載流子的分離方面初步探討Ni控制摻雜對InVO4催化活性的影響機(jī)理。

 

關(guān)鍵字:  InVO4; Ni; 光催化; 可見光; 控制摻雜

Preparation of InVO4 thin films doped by 
Ni under control and its visible
photocatalytic activities
LI Xin-jun1, FAN Jun-lin12, ZHENG Shao-jian1,WANG Jian-hua3

1. Guangzhou Institute of Energy Conversion,
Chinese Academy of Sciences, Guangzhou 510640, China;
2. Graduate School; Chinese Academy of Sciences, Beijing 100039, China;
3. No.719 Research Institute; China Shipbuilding Industry Corporation,
Wuhan 430064, China

Abstract: The thin films of InVO4 doped by Ni under control were prepared by sol-gel method, crystal structure of InVO4 and the synthesis process were characterized by X-ray diffractometry (XRD), differential thermal analysis associated with thermal gravimetric analysis (TGA-DTA). The absorbability of the films was studied by UV-vis spectrophotometer. The photoelectric characteristic of the films were studied by the electro-chemistry work station. And the visible photoelectric activities of the films were characterized by degradation rate of the methylene blue under visible light. The results show that the crystal transformation temperature of InVO4 is about 500 ℃. And the InVO4 films are visible response. The visible photocatalytic activity of the InVO4 film can be enhanced by Ni doping in the bottom layer whereas decreases by Ni uniform-doping. The photoelectric signal of the Ni bottom-doping InVO4 film is stronger than that of the Ni uniform-doping and pure ones. The mechanism of the photocatalytic activity of InVO4 film enhanced by Ni bottom-doping was also discussed based on the separation of photo generated carriers.

 

Key words: InVO4; Ni; photocatalysis; visible light; doped under control

ISSN 1004-0609
CN 43-1238/TG
CODEN: ZYJXFK

ISSN 1003-6326
CN 43-1239/TG
CODEN: TNMCEW

主管:中國科學(xué)技術(shù)協(xié)會 主辦:中國有色金屬學(xué)會 承辦:中南大學(xué)
湘ICP備09001153號 版權(quán)所有:《中國有色金屬學(xué)報(bào)》編輯部
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