(西安交通大學 金屬材料強度國家重點實驗室， 西安 710049)
摘 要: 利用微分電容法結(jié)合Mott-Schottky理論研究鉛電極1.28 V (vs SCE)下硫酸溶液中所形成陽極腐蝕膜的半導體性質(zhì)， 同時對測試頻率、 成膜時間及成膜溶液pH值等影響膜半導體性能的因素也做了分析。 結(jié)果表明： 鉛陽極膜具有n型半導體特性， 施主密度ND隨測試頻率的增加而減小， 隨極化時間的延長而增加， 隨溶液pH值的增加而減小。 溶液pH值的改變可以顯著影響膜的平帶電位EFB， 兩者間呈線性關(guān)系， 擬和斜率為60.43。
關(guān)鍵字: 陽極膜; 微分電容法; 施主密度; 平帶電位
formed on lead
（State Key Laboratory for Mechanical Behavior of Materials,
Xi'an Jiao Tong University, Xi'an 710049, China）
Abstract: The semi-conductive properties of the anodic film formed on lead electrode at 1.28 V (vs SCE) in sulfuric acid solution were investigated by differential capacitance measurement and Mott-Schottky analysis. In addition, the factors affecting the semi-conductive property of anodic film, such as measured frequency, formation time and pH value of the solution, were analyzed. The results show that the anodic film shows an n-type semi-conductive character, the donor density (ND) decreases with the measurement frequency increasing, increases with the polarization time prolonging and decreases with pH value increasing. The flat-band potential (φFB) is significantly influenced by the pH value of the solution, they have a linear relationship with a slope of 60.43.
Key words: anodic film; differential capacitance measurement; donor density; flat-band potential
