(上海交通大學(xué) 材料科學(xué)與工程學(xué)院
高溫材料及測試教育部重點實驗室, 上海 200030)
摘 要: 利用簡易合金靶材在Si(100)基底上單靶磁控濺射制備Cu1-xCrx(x=1.19～2.37, 摩爾分?jǐn)?shù)，％)薄膜。 研究不同名義成分的合金靶材得到的濺射態(tài)薄膜的成分、 電學(xué)性能、 組織結(jié)構(gòu)及表面狀態(tài)。 研究結(jié)果表明: 利用簡易合金靶材制備的Cu1-xCrx薄膜成分可控。 Cr的加入增強(qiáng)了濺射態(tài)薄膜的(111)織構(gòu), 且隨著薄膜厚度的增加, (111)織構(gòu)增強(qiáng)； 855 nm厚的Cu-2.37%Cr薄膜的(111)與(200)的峰強(qiáng)比高達(dá)8.48； 合金元素Cr顯著影響濺射態(tài)薄膜的表面狀態(tài)(平整性和致密度)和電阻率； 隨著Cr含量的增加, 前者呈現(xiàn)先升高后下降的趨勢, 而薄膜電阻增加； Cu-2.18%Cr薄膜由于應(yīng)力增加局部產(chǎn)生微裂紋, 薄膜連續(xù)性下降。 并從薄膜生長動力學(xué)以及自由能的角度對上述結(jié)果進(jìn)行了初步的闡述。
關(guān)鍵字: Cu1-xCrx薄膜； 磁控濺射； 濺射態(tài)； 織構(gòu)
（Key Laboratory of Ministry of Education for High Temperature Materials and Testing,
School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200030, China）
Abstract: Cu1-xCrx films(x=1.19-2.37, mole fraction, %) were deposited on the Si (100) substrate by magnetron sputtering using a single alloy target. The concentration, electrical resistivity, microstructure and morphology of films deposited by targets with different nominal Cr concentration were investigated. The results show that the concentrations of films are predictably. Cr intensifies the (111) texture which increases with increasing thickness of films. The peak strength ratio of (111) to (200) of Cu-2.37%Cr film with thickness of 855 nm is 8.48. As the concentration of Cr increases, the smoothness and compactness of films increase firstly whereas then decrease subsequently, while the electrical resistivity keeps on increasing. The continuity of Cu-2.18%Cr film decreases due to the formation of micro-crack.. These results are explained in the view of the dynamics of film growth and energy.
Key words: Cu1-xCrx films; magnetron sputtering; as-deposited; texture
