(1. 江蘇工業(yè)學(xué)院 材料科學(xué)與工程系, 常州 213016；
2. 江蘇大學(xué) 材料科學(xué)與工程學(xué)院, 鎮(zhèn)江 212013；
3. 河海大學(xué) 材料科學(xué)與工程系, 南京 210098；
4. 特拉華大學(xué) 材料科學(xué)與工程系, 紐華克19711, 美國(guó))
摘 要: 在醇-水體系中以HMT為緩釋沉淀劑制備了納米CeO2粉體, 并用TEM、 SAD、 XRD對(duì)其進(jìn)行了表征, 將制備的不同粒徑納米CeO2粉體配制成拋光液, 對(duì)GaAs晶片進(jìn)行了化學(xué)機(jī)械拋光。 研究了醇的引入及煅燒溫度對(duì)粉體性能的影響, 并就納米CeO2磨料尺寸對(duì)GaAs晶片拋光后表面粗糙度的影響機(jī)理進(jìn)行了探討。 結(jié)果表明： 醇水體系中制備的納米CeO2顆粒較水溶液中制備的顆粒粒徑小, 且分散性好; 隨著煅燒溫度的升高, 顆粒逐漸增大, 不同尺寸的納米顆粒具有不同的拋光效果; 隨著磨料粒徑的增大, 表面粗糙度值也隨之升高。
關(guān)鍵字: 納米CeO2； GaAs； 醇水法； 拋光
on GaAs wafer
CHEN Jian-qing3, NI Chao-ying4
（1. Department of Materials Science and Engineering,
Jiangsu Polytechnic University, Changzhou 213016, China;
2. School of Materials Science and Engineering,
Jiangsu University, Zhenjiang 212013, China;
3. Department of Materials Science and Engineering,
Hehai University, Nanjing 210098, China;
4. Department of Materials Science and Engineering,
University of Delaware, Newark 19711, USA）
Abstract: Nano-sized CeO2 powders were synthesized by homogeneous precipitation method in alcohol-water solution with HMT as precipitator, the powders were characterized by TEM, SAD and XRD. The prepared powders were collocated into polishing slurry for chemical mechanical polishing of GaAs wafer. The effects of alcohol nature and calcine temperature on the resultant CeO2 nanoparticles were investigated, and the influence mechanism of nano-CeO2 size on the roughness of GaAs wafer was also discussed. The results show that the particles prepared by the above method are of smaller size and better dispersion than those obtained from the ordinary powders synthesized in water solution. The particle size become larger with the increase of calcination temperature. Various size of particles have the different polishing effect, of which the surface roughness rises with the increase of particle size.
Key words: nano-sized CeO2； GaAs； alcohol-water method； polishing
