(山東大學 材料科學與工程學院，濟南 250061)
摘 要: 利用Monte Carlo方法模擬了300×300×300三維正常晶粒長大過程，研究密排六方點陣的應(yīng)用可行性及其特點，比較不同點陣結(jié)構(gòu)以及不同范圍的近鄰結(jié)點的能量計算對晶粒長大過程的影響。通過綜合分析晶粒長大動力學和拓撲結(jié)構(gòu)發(fā)現(xiàn)，密排六方的點陣結(jié)構(gòu)以及考慮更大范圍近鄰結(jié)點的能量計算方式更適合正常晶粒長大過程的模擬。
關(guān)鍵字: 晶粒長大；Monte Carlo；三維模擬；點陣類型
（School of Materials Science and Engineering, Shandong University, Ji’nan 250061, China）
Abstract:A 300×300×300 three-dimensional normal grain growth was simulated by using Monte Carlo method. Different lattice types and energy calculations considering different neighboring sites ranges were compared. It could be found that the triangular lattice and energy calculations considering a wide neighboring sites range are much more appropriate to simulate grain growth by comprehensive analyzing grain growth dynamics and topological microstructure.
Key words: grain growth; Monte Carlo; three-dimensional; simulation; triangular
