Transactions of Nonferrous Metals Society of China The Chinese Journal of Nonferrous Metals

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中國(guó)有色金屬學(xué)報(bào)

ZHONGGUO YOUSEJINSHU XUEBAO

第18卷    第6期    總第111期    2008年6月

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文章編號(hào):1004-0609(2008)06-1070-12
化學(xué)脫鈷對(duì)硬質(zhì)合金沉積金剛石薄膜的影響
魏秋平1,余志明1,馬 莉2,楊 莉1,劉王平3,肖 和3

(1. 中南大學(xué) 材料科學(xué)與工程學(xué)院,長(zhǎng)沙 410083;2. 中南大學(xué) 粉末冶金國(guó)家重點(diǎn)實(shí)驗(yàn)室,長(zhǎng)沙 410083;3. 株洲硬質(zhì)合金集團(tuán),株洲 412000)

摘 要:

采用HFCVD系統(tǒng),以CH4和H2為反應(yīng)氣體,分別在YG3、YG6、YG10、YG13硬質(zhì)合金上沉積了金剛石薄膜,研究了化學(xué)脫鈷處理對(duì)不同鈷含量硬質(zhì)合金沉積金剛石薄膜的影響。通過(guò)對(duì)105個(gè)樣品的實(shí)驗(yàn)結(jié)果進(jìn)行統(tǒng)計(jì)分析發(fā)現(xiàn),YG3所得金剛石薄膜樣品具有足夠結(jié)合強(qiáng)度的比例為89%;而YG6、YG10 和YG13所得樣品的相應(yīng)值分別為24%、7%和0%。相反,YG3、YG6、YG10 和YG13所得金剛石薄膜嚴(yán)重破壞的比例分別為0%、64%、72%和79%。研究表明,化學(xué)腐蝕脫鈷處理能夠解決金剛石涂層形核率低的問(wèn)題,但難以解決高鈷硬質(zhì)合金的附著性差的問(wèn)題。

 

關(guān)鍵字: 金剛石薄膜;硬質(zhì)合金;預(yù)處理;附著力

Effects of chemical surface pretreatments on diamond coatings on cemented tungsten carbide substrate
WEI Qiu-ping1, YU Zhi-ming1, MA Li2, YANG Li1, LIU Wang-ping3, XIAO He3

1. School of Materials Science and Engineering, Central South University, Changsha 410083, China;2. Key State Laboratory of Powder Metallurgy, Central South University, Changsha 410083, China;3. Zhuzhou Cemented Carbide Group Corporation, Zhuzhou 412000, China

Abstract:Diamond films were deposited on cemented tungsten carbide substrates of various cobalt content (3%, 6%, 10% and 12% Co) by hot filament chemical vapour deposition (HFCVD) to assess the role of cobalt on the quality and adhesion (reliability) of diamond coatings. The samples were characterized by X-ray diffractometry (XRD), scanning electron microscope (SEM) in combination with energy dispersive spectrometer (EDS). Prior to deposition, the substrates were submitted to surface roughening by Murakami’s etching and to surface binder removal by acid liquor. The adhesion was evaluated by Rockwell indentation tests (60 kg) conducted with a Brale indenter and compared with the adhesion of diamond films grown onto WC-3% Co, WC-6% Co, WC-10% Co, and WC-13% Co, which were submitted to similar etching pretreatments and identical deposition conditions. According to the statistic table of adhesion distribution of 105 samples, YG3 substrate which has enough adhesion is 89%, and that of YG6, YG10 and YG13 substrate is 24%, 7% and 0%, respectively. However, the rate-of-failure of them is 0%, 64%, 72% and 79%, respectively. The results show that diamond films on YG3 substrates exhibit good adhesion levels, compared with those obtained for HFCVD diamond on YG6, YG10 and YG13 with similar microstructure.

 

Key words: diamond films; cemented carbide; pretreatment; adhesion

ISSN 1004-0609
CN 43-1238/TG
CODEN: ZYJXFK

ISSN 1003-6326
CN 43-1239/TG
CODEN: TNMCEW

主管:中國(guó)科學(xué)技術(shù)協(xié)會(huì) 主辦:中國(guó)有色金屬學(xué)會(huì) 承辦:中南大學(xué)
湘ICP備09001153號(hào) 版權(quán)所有:《中國(guó)有色金屬學(xué)報(bào)》編輯部
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