(中南大學(xué) 粉末冶金國家重點(diǎn)實(shí)驗(yàn)室，長沙 410083)
摘 要: 利用TaCl5-Ar-C3H6體系，采用X射線衍射技術(shù)和掃描電鏡研究不同溫度下化學(xué)氣相沉積TaC涂層微觀形貌及晶粒擇優(yōu)生長。結(jié)果表明：在800~1
關(guān)鍵字: TaC涂層；化學(xué)氣相沉積；擇優(yōu)取向；微觀形貌
（State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083, China）
Abstract:TaC film was deposited by chemical vapor deposition technique at different temperatures with TaCl5-Ar-C3H6 system. The surface morphology and preferential growth of TaC crystals were investigated by X-ray diffractometry and scanning electron microscopy. The results show that within 800−1 200 ℃, TaC crystals of either ball-like particle with randomly preferential orientation, or dendrite with <220> orientation, or tetrahedral pyramid with <200> orientation are obtained with increasing of temperature. The preferential growth of TaC crystals can be fairly explained by the growth parameter α and VAN DER DRIFT model, MEAKIN model, selective evolution model at nanometric scale. The pyramidal shape crystals with <200> textures are formed at α = 3, while <220> formed at α = 1.5.
Key words: TaC coatings; chemical vapor deposition; preferential growth; surface morphology
