(1. 福建泉州師范學(xué)院 化學(xué)系，泉州 362000；
2. 浙江大學(xué) 化學(xué)系，杭州 310027；
3. 中國(guó)科學(xué)院 金屬研究所 金屬腐蝕與防護(hù)國(guó)家重點(diǎn)實(shí)驗(yàn)室，沈陽(yáng) 110016)
摘 要: 采用溶膠−凝膠法分別制備未摻雜和鈷摻雜TiO2溶膠，室溫下將其分別與三乙胺反應(yīng)制得氮摻雜和(Co, N)共摻雜的TiO2溶膠，然后通過(guò)浸漬−提拉法在鈦片上成膜，經(jīng)燒結(jié)獲得摻雜光電極。采用XRD、SEM、XPS和紫外−可見(jiàn)光譜和光電流作用譜等對(duì)電極進(jìn)行表征，并探討其光電響應(yīng)機(jī)理。結(jié)果表明：TiO2共摻雜后并未引起TiO2能帶邊緣位置發(fā)生明顯改變，N主要以NOx形式摻雜；(Co, N)共摻雜TiO2薄膜電極的可見(jiàn)光電響應(yīng)比單摻雜的高，這主要?dú)w因于共摻雜TiO2薄膜電極的比表面積增大、光吸收性能改善、界面電荷轉(zhuǎn)移速率提高以及共摻雜元素的協(xié)同作用等。
關(guān)鍵字: TiO2薄膜；鈷氮共摻雜；光電化學(xué)；可見(jiàn)光
and their photoelctrochemical performance
ZHANG Jian-qing2, 3, CAO Chu-nan2, 3
（1. Department of Chemistry, Quanzhou Normal College, Quanzhou 362000, China;
2. Department of Chemistry, Zhejiang University, Hangzhou 310027, China;
3. State Key Laboratory for Corrosion and Protection, Institute of Metals Research, Chinese Academy of Sciences,
Shenyang 110015, China）
Abstract:The undoped and cobalt doped TiO2 sols were prepared using sol-gel method. After addition of triethylamine into the respective sol at room temperature, nitrogen and (Co, N) codoped TiO2 sols were obtained. Various thin film electrodes were prepared from the sols using dip-coating approach. These films were characterized by XRD, SEM, XPS, UV-Vis absorption spectroscopy and photocurrent action spectra, and their photoelectrochemical response mechanisms under visible light were also discussed. The results show that the (Co, N) codoped TiO2 electrode exhibits an enhanced incident photon to current efficiency under visible light in comparison with the Co-doped and N doped TiO2 alone. Codoping dose not shift the position of energy band edges of the electrodes where nitrogen exists in the form of NOx. The enhanced photoresponse observed can be attributed to the increase in surface area, light absorbance, interface charge transfer rate of photogenerated carriers and cooperation effect between the doping species.
Key words: TiO2 thin film; (Co, N) codoping; photoelectrochemistry; visible light
