(西北工業(yè)大學 材料學院，西安 710072)
摘 要: 采用化學氣相沉積的方法，以Zn粉末為原料，CuSe納米粒子為催化劑，在Si襯底上成功制備了毫米級ZnSe納米線。用X射線衍射、EDS和SEM對產物的結構、成分和形貌進行了測試與表征。結果表明：生長的ZnSe納米線為立方閃鋅礦結構，長度達0.35~
關鍵字: Ⅱ−Ⅵ族化合物；ZnSe；CuSe；納米線；氣液固生長機制
with CuSe nanoparticle catalysts method
（School of Materials Science and Engineering, Northwestern Polytechnical University, Xi’an 710072, China）
Abstract: The ultralong ZnSe nanowires were successfully synthesized by chemical vapor deposition (CVD) method on silicon substrates using Zn and CuSe nanoparticles as material and catalysts, respectively. The microstructures and morphologies of as-prepared nanowires were characterized by X-ray diffractometry, X-ray energy dispersive spectroscopy and scanning electron microscopy. The results show that the product is ZnSe nanowires with length of 0.35−0.70 mm and the mole ratio of Zn to Se is 1׃0.97. The photoluminescence (PL) spectrum of as-prepared ZnSe nanowires show strong excitonic emission at around 439 nm under 325 nm excitation wavelength at room temperature, which indicates that the ZnSe nanowires have good crystal quality. Under the redox effects, the growth mechanism of ZnSe nanowire accords with the vapor-liquid-solid (VLS) process, and Cu3Zn alloy is the growth catalyst.
Key words: Ⅱ-Ⅵ materials; ZnSe; CuSe; nanowires; VLS growth mechanism
